专利名称：METHOD FOR FORMING UNDERLYING
INSULATION FILM
发明人：SUGAWARA, TAKUYA,TADA,
YOSHIHIDE,NAKAMURA, GENJI,OZAKI,SHIGENORI,NAKANISHI, TOSHIO,SASAKI,MASARU,MATSUYAMA, SEIJI,HASEBE,KAZUHIDE,NAKAJIMA, SHIGERU,FUJIWARA,TOMONORI
申请号：EP03715674申请日：20030331公开号：EP1492161A4公开日：20060524
摘要：Plasma based on processing gas is irradiated to the surface for the insulatingfilm being configured on electronic device base material, to form basilar memebrane onthe interface of the insulating film and electronic device base material, wherein theprocessing gas contains the gas including at least oxygen atom. On interface betweeninsulating film and electronic device base material, the available high-quality underlyingmembrane for improving the insulation membrane property.
申请人：TOKYO ELECTRON LIMITED
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