专利名称：Method and device for temperature
measurement of FinFET devices
发明人：Junhong Feng,Zhenghao Gan申请号：US15648408申请日：20170712公开号：US09970981B2公开日：20180515
专利附图：
摘要：A semiconductor structure includes a semiconductor device that includes anactive region having a semiconductor fin and a gate structure across the semiconductorfin. The gate structure includes a gate electrode. The semiconductor structure also
includes a gate line extending from the gate electrode and a metal wiring that is
positioned above the gate line and is electrically connected to the gate line through twoor more nodes. The semiconductor structure also includes a first measuring electrodeand a second measuring electrode coupled respectively to two ends of the metal wiring,the first measuring electrode disposed closer to the gate electrode than the secondmeasuring electrode. The semiconductor structure is configured to measure thetemperature of the semiconductor device. During temperature measurement, the firstmeasurement electrode is coupled to a first potential and the second measurementelectrode is coupled to a second potential that is lower than the first potential.
申请人：SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI)CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING)CORPORATION
地址：Shanghai CN,Beijing CN
国籍：CN,CN
代理机构：Kilpatrick Townsend & Stockton LLP
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