专利名称：Three dimensional NAND device containing
fluorine doped layer and method of makingthereof
发明人：Peter Rabkin,Jayavel Pachamuthu,Johann
Alsmeier
申请号：US14521050申请日：20141022公开号：US09825051B2公开日：20171121
专利附图：
摘要：A method of making a monolithic three dimensional NAND string comprising
forming a stack of alternating layers of a first material and a second material differentfrom the first material over a substrate, forming an at least one front side opening in thestack and forming at least a portion of a memory film in the at least one front sideopening. The method also includes forming a semiconductor channel in the at least onefront side opening and doping at least one of the memory film and the semiconductorchannel with fluorine in-situ during deposition or by annealing in a fluorine containingatmosphere.
申请人：SanDisk Technologies, Inc.
地址：Plano TX US
国籍：US
代理机构：The Marbury Law Group PLLC
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