专利名称：Method for producing an electromagnetic
radiation detector and detector obtained bysaid method
发明人：PAUTET, CHRISTOPHE,ETCHEBERRY,
ARNAUD,CAUSIER, ALEXANDRE,GERARD,ISABELLE
申请号：EP12173327.3申请日：20120625公开号：EP2541601A1公开日：20130102
专利附图：
摘要：The method for removing a cadmium zinc telluride growth substrate of a circuitfor detecting electromagnetic radiation such as infrared or visible radiations, comprisessubjecting the growth substrate to a mechanical polishing or chemical mechanicalpolishing step or an etching step to reduce its thickness to produce an interface zonebetween a material of the detection circuit and the growth substrate, and subjecting theinterface to an iodine treatment. The iodine is present in the molecular form in solutioncomprising water and methanol as a solvent. The method for removing a cadmium zinctelluride growth substrate of a circuit for detecting electromagnetic radiation such asinfrared or visible radiations, comprises subjecting the growth substrate to a mechanicalpolishing or chemical mechanical polishing step or an etching step to reduce its thicknessto produce an interface zone between a material of the detection circuit and the growthsubstrate, and subjecting the interface to an iodine treatment. The iodine is present in themolecular form in solution comprising water and methanol as a solvent. The iodinetreatment is performed in an acid medium preceded by deoxidizing action of the surfacearea of variation residual composition (5') after the mechanical polishing or chemical-mechanical polishing step or etching step, where the deoxidizing action is carried out bysubjecting the interface zone to a bath including composition, and is performed byimmersing a detector resulting from mechanical polishing and/or chemical-mechanicalsteps and/or etching step in the bath. The circuit includes a radiation detection layermade of mercury cadmium telluride (Hg ( 1 - x )Cd xTe) that is obtained by liquid or vaporphase epitaxy or by molecular beam epitaxy, and is hybridized on a read circuit. Thegrowth substrate is made of a monocrystalline semiconductor in which a cadmiumtelluride lattice parameter adaptation layer is deposited. The adaptation layer has athickness of several micrometers. The interface zone is subjected to chemical etching toremove the residual thickness of the growth substrate prior to subjecting the interfacezone to the iodine treatment and after the step of mechanical polishing or chemical-mechanical polishing or etching step.
申请人：SOCIETE FRANCAISE DE DETECTEURS, INFRAROUGES- SOFRADIR,CENTRENATIONAL DE LA RECHERCHE SCIENTIFIQUE
地址：43-47 rue Camille Pelletan F-92290 Chatenay Malabry FR,3, rue Michel Ange75016 Paris FR
国籍：FR,FR
代理机构：Vuillermoz, Bruno
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