Vertical Semiconductor Structure

专利名称：Vertical Semiconductor Structure发明人：Frédéric Lanois,Alexei Ankoudinov,Vladimir

Rodov

申请号：US15365335申请日：20161130

公开号：US20170301752A1公开日：20171019

专利附图：

摘要：A diode includes upper and lower electrodes and first and second N-typedoped semiconductor substrate portions connected to the lower electrode. A firstvertical transistor and a second transistor are formed in the first portion and series-

connected between the electrodes. The gate of the first transistor is N-type doped andcoupled to the upper electrode. The second transistor has a P channel and has a P-typedoped gate. First and second doped areas of the second conductivity type are located inthe second portion and are separated by a substrate portion topped with another N-type doped gate. The first doped area is coupled to the gate of the second transistor.The second doped area and the other gate are coupled to the upper electrode.

申请人：STMicroelectronics (Tours) SAS

地址：Tours FR

国籍：FR

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