CAPACITOR-LESS MEMORY DEVICE

专利名称：CAPACITOR-LESS MEMORY DEVICE发明人：PARK, Jea-Gun,SHIM, Tae-Hun,LEE, Gon-Sub,KIM, Seong-Je,KIM, Tae-Hyun

申请号：EP09738995.1申请日：20090430公开号：EP2284879A2公开日：20110216

专利附图：

摘要：Provided is a capacitorless memory device. The device includes a semiconductorsubstrate, an insulating layer disposed on the semiconductor substrate, a storage regiondisposed on a partial region of the insulating layer, a channel region disposed on the

storage region to provide a valence band energy offset between the channel region andthe storage region, a gate insulating layer and a gate electrode sequentially disposed onthe channel region, and source and drain electrodes connected to the channel region anddisposed at both sides of the gate electrode. A storage region unit having differentvalence band energy from a channel region unit is disposed under the channel region unitso that charges trapped in the storage region unit cannot be easily drained. Thus, acharge retention time may be increased to improve data storage capability.

申请人：Industry-University Cooperation Foundation Hanyang University

地址：17 Haengdang-dong Seongdong-gu Seoul 133-791 KR

国籍：KR

代理机构：Zimmermann, Tankred Klaus

更多信息请下载全文后查看