Memory system

专利名称：Memory system

发明人：Toshio Ogawa,Yoshihiro Takemae,Yoshinori

Okajima,Tetsuhiko Endo,Yasuro Matsuzaki

申请号：US11443031申请日：20060531

公开号：US20070192527A1公开日：20070816

专利附图：

摘要：A semiconductor memory has a field programmable unit in which logic to inter-convert external signals to be input/output to/from a memory system and internalsignals to be input/output to/from a memory cell array is programmed. A program for

constructing the logic of the field programmable unit is stored in a nonvolatile programmemory unit. Through the field programmable unit, a controller can access the memorycell array, even when the interface of the controller accessing the semiconductormemory is different from an interface for accessing the memory cell array. Therefore,one kind of semiconductor memory can be used as plural kinds of semiconductormemories. This eliminates the need to develop plural kinds of semiconductor memories,reducing a development cost.

申请人：Toshio Ogawa,Yoshihiro Takemae,Yoshinori Okajima,Tetsuhiko Endo,YasuroMatsuzaki

地址：Kawasaki JP,Kawasaki JP,Kawasaki JP,Kawasaki JP,Kawasaki JP

国籍：JP,JP,JP,JP,JP

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