TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
• Fourth-generation IGBT • Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 μs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward
current
Collector power dissipation (Tc = 25°C)
Junction temperature Storage temperature range
VCES
600 V VGES ±20 V DC IC 30 A
1 ms ICP 60 DC IF 30 A
1 ms IFM 60
JEDEC JEITA
― ―
W PC 170 Tj Tstg
150 °C −55 to 150
°C
TOSHIBA 2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit Thermal resistance (IGBT) Thermal resistance (diode)
Rth (j-c) 0.735 °C/W Rth (j-c) 1.90 °C/W
Equivalent Circuit
Collector Marking
TOSHIBA Gate
Emitter GT30J324 Part No. (or abbreviation code)Lot No. A line indicates
lead (Pb)-free package or lead (Pb)-free finish.
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GT30J324 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. MaxUnit
Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance
Turn-on delay time Rise time
Switching time
Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching
loss
Turn-off switching loss
IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr
IF = 30 A, VGE = 0 IF = 30 A, di/dt = −100 A/μs Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 Ω
(Note 1)(Note 2)
― ― ―
1.00 0.80
―
mJ
―
VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
― ― 3.5
― ±500nA ― 1.0 mA ― 6.5 V
V pF
― 2.0 2.45― 4650 ― ― ― ―
0.09 0.07 0.24
― ― ―
μs
― 0.30 ― ― ―
0.05 0.43
― ―
Switching loss
Peak forward voltage Reverse recovery time
― 3.8 V ― 60 ― ns Note 1: Switching time measurement circuit and input/output waveforms
VGE90%0
−VGE IC RG VCE 0
VCE10%td (off)tftoff 10%10% td (on) tr ton 10%L VCC IC90%90%10%
Note 2: Switching loss measurement waveforms
VGE 90% 0
10%IC 0
VCE Eoff Eon5%
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GT30J324
IC – VCE
20
VCE – VGE
Collector-emitter voltage VCE (V) 10 Common emitterTc = −40°C 16Common emitter Tc = 25°C 20 15 Collector current IC (A) 912 860 304IC = 10 A004812 16 20VGE = 8 V0 1 2 3 4 5 Collector-emitter voltage VCE (V)
Gate-emitter voltage VGE (V)
VCE – VGE
20 Tc = 25°C 16 20
VCE – VGE
Collector-emitter voltage VCE (V) Common emitterCommon emitterTc = 125°C 16 Collector-emitter voltage VCE (V) 12 128 30 60 4 IC = 10 A 0 0 4 8 12 16 20 8304IC = 10 A004812 16 2060 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)
IC – VGE
60 Common emitter 50 VCE = 5 V 4Common emitter
VCE (sat) – Tc
Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) VGE = 15 V 360 40 30 2 20 IC = 10 A 110 Tc = 125°C 25−400 0−60−20200 4 8 12 16 20 14030 60 100 Case temperature Tc (°C)
Gate-emitter voltage VGE (V)
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GT30J324
Switching time ton, tr, td (on) – RG
10
Switching time ton, tr, td (on) – IC
3 Switching time ton, tr, td (on) (μs) Switching time ton, tr, td (on) (μs) Common emitter VCC = 300 V VGG = 15 V 3 IC = 30 A : Tc = 25°C : Tc = 125°C (Note 1) 1 1Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3ton0.1td (on)0.3 ton 0.1 td (on) tr 0.03 0.03tr0.010 0.01 1 3 10 30 100 300 10005 10 15 20 25 30 Gate resistance RG (Ω) Collector current IC (A)
Switching time toff, tf, td (off) – RG
10
Switching time toff, tf, td (off) – IC
10 Switching time toff, tf, td (off) (μs) Switching time toff, tf, td (off) (μs) Common emitter VCC = 300 V VGG = 15 V 3 IC = 30 A : Tc = 25°C : Tc = 125°C (Note 1) 1 31toff0.3td (off)tf0.1Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3 toff td (off) 0.1 0.03 tf 0.030.01 1 3 10 30 100 300 10000.010 5 10 15 20 25 30 Gate resistance RG (Ω) Collector current IC (A)
Switching loss Eon, Eoff – RG
30 Common emitter VCC = 300 V VGG = 15 V I = 30 A 10 C : Tc = 25°C : Tc = 125°C (Note 2) 3 Eon 3
Switching loss Eon, Eoff – IC
Switching loss Eon, Eoff (mJ) Switching loss Eon, Eoff (mJ) 1
Eon 0.3
Eoff0.1Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 2) 5 10 15 20 25 30 1 Eoff 0.3 0.030.1 1 10 3 30 100 300 10000.010 Gate resistance RG (Ω) Collector current IC (A)
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GT30J324
C – VCE
10000 500
VCE, VGE – QG
Collector-emitter voltage VCE (V) Common emitterRL = 10 Ω Tc = 25°C 20 3000 Cies Capacitance C (pF) 40016 1000 30030020020012 300 8 VCE = 100 V100 Common emitter 30 f = 1 MHz Tc = 25°C 10 0.1 0.3 1 3 1030 100 1000300 VGE = 0 CoesCres100==004080120 160 4 0 200Collector-emitter voltage VCE (V) Gate charge QG (nC)
IF – VF
10Common collector
trr, Irr – IF
1000 Reverse recovery current Irr (A) VGE = 0 Forward current IF (A) Irr3300 1trr100 25 Tc = 125°C −40 0 0.6 1.2 1.82.4 3.0 3.6Common collector 30 di/dt = −100 A/μs VGE = 0 : Tc 25°C : Tc 125°C 0.110 0 5 10 15 20 25 30 0.3Forward voltage VF (V) Forward current IF (A)
Safe Operating Area
100 IC max (pulsed)* IC max (continuous) 100 μs*10 DC operation 3 *: Single pulse Tc = 25°C 1 ms* 50 μs*100
Reverse Bias SOA
30 Collector current IC (A) Collector current IC (A) 301031 1Curves must be derated linearly 0.3 with increase in temperature. 0.1 1
3 10 30
100
0.310 ms* 300 1000
0.11 Tj ≤ 125°C VGE = 15 V RG = 24 Ω 31030 100 1000300 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)
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Reverse recovery time trr (ns) Gate-emitter voltage VGE (V) GT30J324
rth (t) – tw
Transient thermal resistance rth (t) (°C/W) FRD IGBT Tc = 25°C Pulse width tw (s)
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GT30J324
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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