专利名称：Multi-port memory cell and access method发明人：Sanjay Sancheti,Jeffery Scott Hunt,George M.
Ansel
申请号：US10948006申请日：20040922公开号：US07113445B1公开日：20060926
专利附图：
摘要：A multi-port memory cell () can be formed from seven transistors. Single endedwrite operations can be performed without a boosted word line voltage or variablepower supply. A data value (D/DB) stored in the memory cell () can be cleared by
shorting complementary data nodes (- and -) together. Write data can then be placed ona bit line. Complementary data nodes (- and -) can then be isolated once again, resultingin the write data being latched within the memory cell (). An access method () for a multi-port memory cell is also described.
申请人：Sanjay Sancheti,Jeffery Scott Hunt,George M. Ansel
地址：Sunnyvale CA US,Ackerman MS US,Starkville MS US
国籍：US,US,US
代理人：Bradley T. Sako
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