05
B5819W SCHOTTKY BARRIER DIODEFEATURESPower dissipation
P D: 450 mW (T amb=25℃) Collector currentI F : 1 A Collector-base voltageV R : 40 V
Operating and storage junction temperature range T J , T stg : -55℃ to +150℃MARKING: SL
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)Parameter Symbol Test conditions
MIN MAX UNIT Reverse breakdown voltage V (BR) I R = 1mA 40 VReverse voltage leakage currentI RV R =40V
V R =4V V R =6V 1 0.05 0.075 mAForward voltageV FI F =0.1AI F =1A I F =3A
0.45 0.6 0.9 V Diode capacitanceC D
V R =4V, f=1MHz120pF
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