Si1303DL
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)0.430 at VGS = - 4.5 V
- 20
0.480 at VGS = - 3.6 V 0.700 at VGS = - 2.5 V
ID (A)- 0.72- 0.68- 0.56
FEATURES
•TrenchFET® Power MOSFETs •2.5 V Rated
Pb-freeAvailableRoHS*COMPLIANTSOT-323SC-70 (3-LEADS)G1Marking CodeDLAXXYYLot Traceabilityand Date CodeS2Part # CodeTop View3Ordering Information: Si1303DL-T1Si1303DL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)aPulsed Drain Current
Continuous Diode Current (Diode Conduction)aMaximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °CTA = 70 °CTA = 25 °CTA = 70 °C
Symbol VDSVGS
IDIDMISPDTJ, Tstg
5 sec
Steady State - 20 ± 12
- 0.67- 0.54
- 2.5
- 0.240.290.19- 55 to 150
Unit V
- 0.72- 0.58- 0.280.340.22
A
W°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit t ≤ 5 sec315375
RthJAMaximum Junction-to-Ambienta
Steady State360430°C/W
RthJFMaximum Junction-to-Foot (Drain)285340Steady State Notes:
a.Surface Mounted on 1\" x 1\" FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71075S-61007–Rev. D, 12-Jun-06www.vishay.com
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Si1303DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise notedStaticGate Threshold VoltageGate-Body LeakageZero Gate Voltage Drain CurrentOn-State Drain CurrentaDrain-Source On-State ResistanceaForward TransconductanceaDiode Forward VoltageaDynamicbTotal Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeRise TimeTurn-Off DelayTimeFall TimeSource-Drain Reverse Recovery TimeVGS(th)IGSSIDSSID(on) rDS(on) gfsVSDQg Qgs Qgd td(on) trtd(off) tftrrIF = - 1 A, di/dt = 100 A/µsVDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 ΩVDS = - 10 V, VGS = - 4.5 V, ID = - 1 AVDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 VVDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 °C VDS = - 5 V, VGS = - 4.5 VVGS = - 4.5 V, ID = - 1 A VGS = - 3.6 V, ID = - 0.7 A VGS = - 2.5 V, ID = - 0.3 A VGS = - 10 V, ID = - 1 A IS = - 0.3 A, VGS = 0 V1.70.380.6393112.514351545202055ns- 2.50.3600.4000.5601.7- 1.22.2nC0.4300.4800.700SVΩ-0.6-1.4± 100- 1- 5VnAµAAParameter Symbol Test Conditions Min TypMaxUnit Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless noted
6VGS = 4.5 V5ID- Drain Current (A)4 V3.5 V5ID- Drain Current (A)6TC = - 55 °C25°C4433 V2.5 V2 V3125 °C2211, 1.5 V002468VDS - Drain-to-Source Voltage (V)100.00.51.01.52.02.53.03.54.04.5VGS - Gate-to-Source Voltage (V)Output CharacteristicsTransfer Characteristics
www.vishay.com2Document Number: 71075S-61007–Rev. D, 12-Jun-06
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Si1303DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
2.0250CissrDS(on)- On-Resistance (Ω)VGS = 2.5 V1.2C - Capacitance (pF)1.62001500.8VGS = 3.6 V0.4100Coss50VGS = 4.5 VCrss001234560481216200.0ID - Drain Current (A)VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current12VGS- Gate-to-Source Voltage (V)VDS = 10 VID = 1 ArDS(on)- On-Resistance (Normalized)91.21.6VGS = 4.5 VID = 1 ACapacitance
60.830.4001234Qg - Total Gate Charge (nC)0.0- 50- 250255075100125150TJ- Junction Temperature (C)Gate Charge
102.5On-Resistance vs. Junction TemperatureIS- Source Current (A)1rDS(on)- On-Resistance (Ω)TJ = 150 °C2.01.5ID = 1 A0.1TJ = 25 °C0.011.00.50.0010.00.00.30.60.91.21.50123456VSD - Source-to-Drain Voltage (V)VGS - Gate-to-Source Voltage (V)Source-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source Voltage
Document Number: 71075S-61007–Rev. D, 12-Jun-06www.vishay.com
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Si1303DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.4200.3VGS(th)Variance (V)ID = 250 µA0.2Power (W)1612TA = 25 °C80.10.04- 0.1- 0.2- 50- 250255075100125150010-310-210-1110100600TJ - Temperature (°C)Time (sec)Threshold Voltage21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.5Single Pulse Powert
0.20.10.10.050.02Single Pulse0.0110-410-310-210-11Square Wave Pulse Duration (sec)Notes:PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 360 °C/W3. TJM - TA = PDMZthJA(t)4. Surface Mounted10100600Normalized Thermal Transient Impedance, Junction-to-Ambient21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.0110-410-310-210-1Square Wave Pulse Duration (sec)110Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see http://www.vishay.com/ppg?71075.
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000Revision: 18-Jul-08
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