Phase change memory device having phase change mat

专利名称：Phase change memory device having phase

change material layer containing phasechange nano particles and method offabricating the same

发明人：Khang, Yoon-ho,Jo, Wil-liam,Suh, Dong-seok申请号：EP05257416.7申请日：20051201公开号：EP1667244A2公开日：20060607

专利附图：

摘要：A phase change memory device including a phase change material layer having

phase change nano particles and a method of fabricating the same are provided. Thephase change memory device may include a first electrode (40) and a second electrode(48) facing each other, a phase change material layer (46) containing phase change nanoparticles interposed between the first electrode and the second electrode and/or aswitching device (30) electrically connected to the first electrode.

申请人：Samsung Electronics Co., Ltd.

地址：416 Maetan-Dong, Yeongtong-Gu Suwon-si, Gyeonggi-Do KR

国籍：KR

代理机构：Greene, Simon Kenneth

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