RF3375
0Pb-Free Product
Typical Applications•Basestation Applications
•Broadband, Low-Noise Gain Blocks•IF or RF Buffer AmplifiersProduct Description
The RF3375 is a general purpose, low-cost RF amplifierIC. The device is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) pro-cess, and has been designed for use as an easily-cas-cadable 50Ω gain block. Applications include IF and RFamplification in wireless voice and data communicationproducts operating in frequency bands up to 6000MHz.The device is self-contained with 50Ω input and outputimpedances and requires only two external DC-biasingelements to operate as specified.
1.040.800.500.301.601.40GENERAL PURPOSE AMPLIFIER
•Driver Stage for Power Amplifiers•Final PA for Low-Power Applications•High Reliability Applications
3.102.900.480.362 PL4.604.402.602.40Shaded lead is pin 1.
Dimensions in mm.
1.801.451.751.400.430.380.530.41Optimum Technology Matching® Applied
Si BJTSi Bi-CMOSInGaP/HBT
9GaAs HBT
SiGe HBT
Package Style: SOT89
GaAs MESFETSi CMOSSiGe Bi-CMOS
GaN HEMT
Features
•DC to >6000MHz Operation•Internally Matched Input and Output•13.2dB Small Signal Gain•+28dBm Output IP3•+16.0dBm Output P1dB
1RF INGND42GND3RF OUTOrdering Information
RF3375General Purpose Amplifier
RF337XPCBA-41XFully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.7628 Thorndike Road
Greensboro, NC 27409, USATel (336) 664 1233Fax (336) 664 0454http://www.rfmd.com
Rev A6 0503104-591
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RF3375
Absolute Maximum Ratings
Parameter
Rating
Unit
dBm°C°CmA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Input RF Power+13Operating Ambient Temperature-40 to +85Storage Temperature-60 to +150ICC 80Parameter
Overall
Frequency Range3dB BandwidthGain
SpecificationMin.Typ.Max.
DC to >6000
613.513.513.213.213.012.44.6<1.9:1<2.0:1<1.7:1+33.9+30.0+18.5+16.0-18.0
175139
Unit
MHzGHzdBdBdBdB
Condition
T=25°C, ICC=65mA (See Note 1.)
12.512.512.212.212.010.0
Noise FigureInput VSWROutput VSWR
+31.0+28.0
Output P1dB +17.0+14.5
Reverse IsolationOutput IP3
dB
dBmdBmdBmdBmdB°C/W°C
Thermal
ThetaJC
Maximum Measured Junction
Temperature at DC Bias Con-ditions
Mean Time to Failures
Freq=500MHzFreq=1000MHzFreq=2000MHzFreq=3000MHzFreq=4000MHzFreq=6000MHzFreq=2000MHz
In a 50Ω system, DC to 6000MHzIn a 50Ω system, DC to 500MHz
In a 50Ω system, 500MHz to 6000MHzFreq=1000MHzFreq=2000MHzFreq=1000MHzFreq=2000MHzFreq=2000MHz
ICC=65mA, PDISS=313mW. (See Note 3.)VPIN=4.81VTCASE=+85°CTCASE=+85°C
1500years
With 22Ω bias resistor, T=+25oC
Device Operating Voltage5.185.36VAt pin 8 with ICC=65mA
6.67.0VAt Evaluation Board Connector ICC=65mA
Operating Current6580mASee Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are
not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3375 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3375
may be operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating conditions.
Power Supply
4-592Rev A6 050310
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RF3375
Pin1FunctionRFINDescriptionRF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil-ity.Ground connection.RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is deter-mined by the following equation: Interface Schematic23GNDRFOUTRF OUT(VSUPPLY–VDEVICE)R=------------------------------------------------------ICCCare should also be taken in the resistor selection to ensure that the current into the part never exceeds 80mA over the planned oper-ating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed.Ground connection.RF IN4GND
Rev A6 0503104-593
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RF3375
Application Schematic
VCC422 Ω100 pF+1 µF100 pFRF IN
123100 nHRF OUT
100 pF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)P1P1-1123CON3R122 ΩC1100 pFL1100 nHC2100 pFC3100 pFVCC1GND4+C41 µFVCC
123J1RF IN
50 Ω µstrip50 Ω µstripJ2RF OUT
337x410, r.14-594Rev A6 050310
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RF3375
Evaluation Board LayoutBoard Size 1.195\" x 1.000\"
Board Thickness 0.033”, Board Material FR-4
Rev A6 0503104-595
元器件交易网www.cecb2b.com
RF3375
Gain versus Frequency Across Temperature
16.0(ICC=65mA)15.014.013.0)12.0Bd( n11.0iaG10.09.08.07.0-40°C25°C85°C6.00.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
7000.0
Frequency (MHz)
Output IP3 versus Frequency Across Temperature
40.0
(ICC=65mA)35.0
30.0
)mBd( 325.0
PIO20.0
15.0
-40C25C85C10.0
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
7000.0
Frequency (MHz)Input VSWR versus Frequency Across Temperature
2.5
(ICC=65mA)2.0RWSV1.5
-40C25C85C1.00.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
7000.0
Frequency (MHz)4-596Output P1dB versus Frequency Across Temperature
22.0(ICC=65mA)20.018.016.0)mBd(14.0 rewo12.0P tup10.0tuO8.06.04.0-40°C25°C2.085°C0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
7000.0
Frequency (MHz)
Noise Figure versus Frequency Across Temperature
(ICC=65mA)
7.0
6.0
5.0
)Bd( e4.0
rugiF es3.0
ioN2.0
1.0
-40°C25°C85°C0.0
0.0
500.0
1000.0
1500.0
2000.0
2500.0
3000.0
3500.0
Frequency (MHz)
Output VSWR versus Frequency Across Temperature
2.5
(ICC=65mA)2.0
RWSV1.5
-40C25C85C1.00.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
7000.0
Frequency (MHz)
Rev A6 050310
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Reverse Isolation versus Frequency Across
0.0
Temperature(ICC=65mA)-5.0
)Bd-10.0
( noitalos-15.0I esreveR-20.0
-25.0
-40C25C85C-30.0
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
Frequency (MHz)
Power Dissipation versus Device Voltage Across Temperature
(TAMBIENT=+85°C)
0.500.450.40
)0.35W( de0.30
tapiss0.25iD re0.20woP0.15
0.100.050.00
4.60
4.70
4.80
4.90
5.00
5.10
5.20
VPIN (V)
Bias Current versus Devices Voltage Across Temperature
(At Pin 3 of the RF3375)
100.090.080.070.0
)A60.0m( CCI50.040.030.020.0-40C25C85C10.0
4.6
4.8
5.0
5.2
5.4
5.6
5.8VPIN (V)
Rev A6 050310RF3375
Junction Temperature versus Power Dissipated
180.000
(TAMBIENT=+85°C)170.000
160.000
)C°( eru150.000
tarepm140.000
eT noi130.000
tcnuJ120.000
110.000
100.000
0.250
0.275
0.300
0.325
0.350
0.375
0.400
Power Dissipated (Watts)
Bias Current versus Supply Voltage Across Temperature
100.0
(At Evaluation Board Connector, RBIAS=22Ω)90.0
80.0
70.0
)Am( 60.0
CCI50.0
40.0
30.0
-40C25C85C20.0
5.7
5.9
6.1
6.3
6.5
6.7
6.9
7.1
7.3
7.5
7.7
VCC (V)
4-597
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RF3375
4-598Rev A6 050310
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