专利名称：Trench gate trench field plate vertical
MOSFET
发明人：Marie Denison,Sameer Pendharkar,Guru
Mathur
申请号：US15403403申请日：20170111公开号：US09660021B1公开日：20170523
专利附图：
摘要：A semiconductor device having a vertical drain extended MOS transistor may beformed by forming deep trench structures to define vertical drift regions of the
transistor, so that each vertical drift region is bounded on at least two opposite sides bythe deep trench structures. The deep trench structures are spaced so as to form RESURFregions for the drift region. Trench gates are formed in trenches in the substrate overthe vertical drift regions. The body regions are located in the substrate over the verticaldrift regions.
申请人：Texas Instruments Incorporated
地址：Dallas TX US
国籍：US
代理人：Jacqueline J. Garner,Charles A. Brill,Frank D. Cimino
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容