专利名称：Resistive memory element sensing using
averaging
发明人：R. Jacob Baker申请号：US13868544申请日：20130423公开号：US08711605B2公开日：20140429
专利附图：
摘要：A system for determining the logic state of a resistive memory cell element, forexample an MRAM resistive cell element. The system includes a controlled voltagesupply, an electronic charge reservoir, a current source, and a pulse counter. The
controlled voltage supply is connected to the resistive memory cell element to maintaina constant voltage across the resistive element. The charge reservoir is connected to thevoltage supply to provide a current through the resistive element. The current source isconnected to the charge reservoir to repeatedly supply a pulse of current to rechargethe reservoir upon depletion of electronic charge from the reservoir, and the pulsecounter provides a count of the number of pulses supplied by the current source over apredetermined time. The count represents a logic state of the memory cell element.
申请人：Micron Technology, Inc.
地址：Boise ID US
国籍：US
代理机构：Dickstein Shapiro LLP
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