Method of fabricating silica microstructures

专利名称：Method of fabricating silica microstructures发明人：Kim, Dong-Su, c/oSamsung-Electronics Co.,

Ltd.

申请号：EP01116228.6申请日：20010704公开号：EP1170603A3公开日：20040616

专利附图：

摘要：There is provided a silica microstructure fabrication method. An etch stop layeris first partially deposited on an etching area of a first silica layer formed on a

semiconductor substrate. A second silica layer is deposited on the surfaces of the etch

stop layer and the first silica layer. A mask patterned according to the shape of theetching area is formed on the surface of the second silica layer. The second silica layer isremoved from the etching area using the mask by dry etching, and the etch stop layer isremoved by wet etching.

申请人：SAMSUNG ELECTRONICS CO., LTD.

地址：416, Maetan-dong, Paldal-gu Suwon-City, Kyungki-do KR

国籍：KR

代理机构：Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät

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