专利名称：Hard mask for low-k interlayer dielectric
patterning
发明人：Tony V. Mule,Magdy S. Abdelrahman申请号：US11540528申请日：20060928
公开号：US20080079155A1公开日：20080403
专利附图：
摘要：Described herein are embodiments of a hard mask including a surface to reduceadhesion to an anti-reflective material deposited on a surface, wherein the surface toreduced adhesion provides use of a process to remove the anti-reflective materialdeposited on the surface that minimizes damage to an interlayer dielectric layer belowthe hard mask and methods of manufacturing the same.
申请人：Tony V. Mule,Magdy S. Abdelrahman
地址：Hillsboro OR US,Santa Clara CA US
国籍：US,US
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