专利名称：TRANSISTOR STRUCTURES AND METHODS
OF FABRICATION THEREOF
发明人：Nir TESSLER,Moti MARGALIT,Oded
GLOBERMAN,Roy SHENHAR
申请号：US13667821申请日：20121102
公开号：US20130056835A1公开日：20130307
专利附图：
摘要：An electronic device is presented, such as a thin film transistor. The devicecomprises a patterned electrically-conductive layer associated with an active element of
the electronic device. The electrically-conductive layer has a pattern defining an array ofspaced-apart electrically conductive regions. This technique allows for increasing anelectric current through the device.
申请人：TECHNION RESEARCH AND DEVELOPMENT F
地址：Haifa IL
国籍：IL
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