专利名称：Transistor structures and methods of
fabrication thereof
发明人：Nir Tessler,Moti Margalit,Oded
Globerman,Roy Shenhar
申请号：US14027713申请日：20130916公开号：US09088000B2公开日：20150721
专利附图：
摘要：An electronic device is presented, such as a thin film transistor. The devicecomprises a patterned electrically-conductive layer associated with an active element of
the electronic device. The electrically-conductive layer has a pattern defining an array ofspaced-apart electrically conductive regions. This technique allows for increasing anelectric current through the device.
申请人：TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
地址：Haifa IL
国籍：IL
代理机构：Oliff PLC
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