专利名称：Process for fabricating a semiconductor
device
发明人：IGEL, GUENTER, DIPL.-ING.申请号：EP00127180.8申请日：20001212公开号：EP1111671A3公开日：20040512
摘要： procedure for the manufacture of a halbleiteranordnung (3), and a wafer (1).with a large number of chips (7) plastic halbleiteranordnungen then the wafer
manufactured thereby halbleiteranordnungen pieces rarely, with at least one area of awaferseite w & auml; while the & auml; tzens the order waferbereichs and professional;by means of a passivierungsschicht (9) provided with this and with the associated & auml;the passivierungsschicht cats is removed, characterised by the fact that at least one ä u & w; edge. the wafer (1) at least one haftzone (8) for the passivierungsschicht r &d; r (9) is created by the base material of the wafer exposed and with the r & t.; r thepassivierungsschicht (9) used material from metal is connected and a poet, goodadhesive, chemical combination makes that the precious metal & passivierungsschichtdivo. (9) with its covered with a oxydschicht and \\/ or the application of aluminium coatedwaferbereich passivierungsschicht (9) nichtchemisch is connected and a & t.; on thechemical link in the haftbereichen decreased attachment comes and thepassivierungsschicht...
申请人：MICRONAS GMBH
地址：Hans-Bunte-Strasse 19 79108 Freiburg DE
国籍：DE
代理机构：Patentanwälte Westphal, Mussgnug & Partner
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