20 V, Dual N−Channel, SC−88 ESD Protection
Features
Small Signal MOSFET
••••••••••
Small Footprint (2 x 2 mm)
Low Gate Charge N−Channel DeviceESD Protected Gate
Same Package as SC−70 (6 Leads)
AEC−Q101 Qualified and PPAP Capable − NVJD4401NThese Devices are Pb−Free and are RoHS CompliantLoad Power Switching
Li−Ion Battery Supplied Devices
Cell Phones, Media Players, Digital Cameras, PDAsDC−DC Conversion
Parameter
SymbolVDSSVGS
SteadyStateSteadyStateSteadyStateSteadyState
TA = 25°CTA = 85°CTA = 25°CTA = 85°CTA = 25°CTA = 85°CTA = 25°CTA = 85°Ct ≤10 ms
PDIDMTJ, TSTG
ISTLIDPDID
Value20±120.630.460.270.140.910.650.550.29±1.2−55 to1500.63260
AWAWUnitVVA
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V(BR)DSS20 V
RDS(on) Typ0.29 W @ 4.5 V0.36 W @ 2.5 V
ID Max0.63 A
Applications
SC−88 (SOT−363)
S1
16D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain−to−Source VoltageGate−to−Source VoltageContinuous Drain Current
(Based on RqJA)Power Dissipation(Based on RqJA)Continuous Drain Current
(Based on RqJL)Power Dissipation(Based on RqJL)Pulsed Drain Current
G1
25G2
D2
34S2
Top View
MARKING DIAGRAM &PIN ASSIGNMENT
D1G2S2
1SC−88/SOT−363CASE 419BSTYLE 28
6
TD MGG1
S1G1D2
TDMG
= Device Code= Date Code
= Pb−Free Package
Operating Junction and Storage TemperatureContinuous Source Current (Body Diode)Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
°C
A°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Junction−to−Ambient – Steady StateJunction−to−Lead (Drain) – Steady State
SymbolRqJARqJL
Typ400194
Max460226
Units°C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the packagedimensions section on page 4 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
1.Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1
Publication Order Number:
NTJD4401N/D
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NTJD4401N, NVJD4401N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown VoltageDrain−to−Source Breakdown VoltageTemperature CoefficientZero Gate Voltage Drain CurrentGate−to−Source Leakage CurrentON CHARACTERISTICS (Note 2)Gate Threshold VoltageGate Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)VGS(TH)/TJRDS(on)gFSCISSCOSSCRSSQG(TOT)QG(TH)QGSQGDtd(ON)trtd(OFF)
tf
VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 WVGS = 4.5 V, VDS = 10 V,
ID = 0.63 AVGS = 0 V, f = 1.0 MHz,
VDS = 20 VVGS = 4.5 V, ID = 0.63 AVGS = 2.5 V, ID = 0.40 A
Forward TransconductanceCHARGES AND CAPACITANCESInput CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTotal Gate ChargeThreshold Gate ChargeGate−to−Source ChargeGate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)Turn−On Delay TimeRise Time
Turn−Off Delay TimeFall Time
0.0830.2270.7860.506
ms
33132.81.30.10.20.4
46225.03.0
nCpF
VDS = 4.0 V, ID = 0.63 AVGS = VDS, ID = 250 mA
0.6
0.92−2.10.290.362.0
0.3750.445
S
1.5
VmV/ °CW
V(BR)DSSV(BR)DSS/TJ
IDSSIGSS
VGS = 0 V, VDS = 16 VVDS = 0 V, VGS = ±12 VVGS = 0 V, ID = 250 mA
20
2722
1.010
VmV/ °CmAmA
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage
VSDtRR
VGS = 0 V, IS =0.23 A
TJ = 25°CTJ = 125°C
0.760.630.410
ms
1.1
V
Reverse Recovery Time
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 0.63 A
2.Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3.Switching characteristics are independent of operating junction temperatures.
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NTJD4401N, NVJD4401N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.4ID, DRAIN CURRENT (AMPS)1.210.80.60.4
1.4 V0.200
2
4
61.2 V8
10
00
1.6 VVGS = 4.5 V to 2.2 VVGS = 2 V1.8 VTJ = 25°CID, DRAIN CURRENT (AMPS)1.2
VDS ≥ 10 V10.80.60.40.2
TJ = 125°C25°CTJ = −55°C0.40.81.221.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)0.70.60.50.4
TJ = 25°CTJ = −55°CTJ = 125°C0.70.60.50.40.30.20.100
0.2
Figure 2. Transfer Characteristics
VGS = 4.5 VVGS = 2.5 VTJ = 125°CTJ = 25°CTJ = −55°C0.30.2
0.100
0.2
0.410.80.6
ID, DRAIN CURRENT (AMPS)
1.2
1.4
0.60.410.8
ID, DRAIN CURRENT (AMPS)
1.21.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
2RDS(on), DRAIN−TO−SOURCERESISTANCE (NORMALIZED)1.81.61.41.210.80.6−50−2502550751001251500
ID = 0.63 AVGS = 4.5 Vand 2.5 V80
Figure 4. On−Resistance vs. Drain Current and
Temperature
TJ = 25°CVGS = 0 VC, CAPACITANCE (pF)60
40
Ciss20
CossCrss05101520TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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NTJD4401N, NVJD4401N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0.7IS, SOURCE CURRENT (AMPS)0.60.50.40.30.20.10
1.4
00.20.40.6TJ = 150°CTJ = 25°C0.81VGS = 0 VVGS, GATE−TO−SOURCE VOLTAGE (VOLTS)543210QGSQGDQG(TOT)VGSID = 0.63 ATJ = 25°C0
0.2
0.40.60.81Qg, TOTAL GATE CHARGE (nC)
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
NTJD4401NT1GNVJD4401NT1G
PackageSC−88(Pb−Free)SC−88(Pb−Free)
Shipping†3000 / Tape & Reel3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
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NTJD4401N, NVJD4401N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02ISSUE W
DeA3654NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.419B−01 OBSOLETE, NEW STANDARD 419B−02.
MILLIMETERS
DIMMINNOMMAXA0.800.951.10A10.000.050.10A30.20 REFb0.100.210.30C0.100.140.25D1.802.002.20E1.151.251.35e0.65 BSCL0.100.200.30HE2.002.102.20STYLE 26:
PIN 1.SOURCE 1
2.GATE 1 3.DRAIN 2 4.SOURCE 2 5.GATE 2 6.DRAIN 1
INCHES
NOMMAX0.0370.0430.0020.0040.008 REF0.0040.0080.0120.0040.0050.0100.0700.0780.0860.0450.0490.053
0.026 BSC0.0040.0080.0120.0780.0820.086MIN0.0310.000HE123−E−Cb6 PL0.2 (0.008)AMLE
MA1SOLDERING FOOTPRINT*
0.500.01970.650.0250.650.0250.400.01571.90.0748SCALE 20:1mmǓǒinches*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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