专利名称：Field effect transistor and method of
manufacturing the same
发明人：Masaaki Fujimori,Tomihiro
Hashizume,Masahiko Ando
申请号：US11602404申请日：20061121
公开号：US20070117298A1公开日：20070524
专利附图：
摘要：A TFT having a large mobility of carriers that are conducted through a channelas compared with a conventional organic TFT, and a method of manufacturing the TFT
inexpensively and easily are provided. The channel is formed of a semiconductor organicmolecular crystal thin film which is highly oriented, and a TFT that is large in the mobilityof the carriers that are conducted through the channel, and a lyophilic TFT pattern that issurrounded by a lyophobic region on a substrate are formed, and the configuration ofthe pattern is featured, whereby a solution of the semiconductor organic moleculeswhich is supplied to an appropriate region of a substrate surface including the channel isspontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in thedrying process.
申请人：Masaaki Fujimori,Tomihiro Hashizume,Masahiko Ando
地址：Hatoyama JP,Hatoyama JP,Hitachinaka JP
国籍：JP,JP,JP
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