LCD, Memory and Storage - 1H 2011
Samsung Semiconductor, incSamsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks to powerful servers—and in a wide range of handheld devices such as smartphones and tablets. Samsung also delivers the industry’s widest line of storage products from the consumer to the enterprise level. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products.MarketsMobile / WirelessdrAMSrAMFlASHASicloGictFt/lcdodd/HddNotebook PCsDesktop PCs /WorkstationsServersNetworking /CommunicationsConsumer Electronicssamsung.com/us/business/oem-solutionsdrAMsamsung.com/semi/dram• DDR3 SDRAM• DDR2 SDRAM• DDR SDRAM• SDRAMPages 4-12• Mobile DRAM• Graphics DDR SDRAM• DRAM Ordering InformationFlASHsamsung.com/semi/flash• SLC Flash• MLC Flash• SD and microSD Cards• moviNAND™ (eMMC)Pages 13-15• Solid State Drive• SATA SSD• Flash Ordering InformationHiGH-SPeed SrAMsamsung.com/semi/sram• Asychronous• Synchronous• NtRAM™• Late-Write RR SRAMPages 16-20• DDR Synchronous SRAM• QDR Synchronous SRAM• SRAM Ordering InformationMulti-cHiP PAcKAGesamsung.com/semi/mcp• NAND + MDDR• moviNAND + LPDDR2• NOR + UtRAMPage 21StorAGe• SATA SSDPages 22-24samsung.com/greenmemory• Solid State Drivesamsung.com/hddsamsungodd.com• Hard Disk Drive• Optical Disk Drivelcdtftlcd.com• Exclusive Digital Pages 25-27• Basic Digital Informationsamsung.com/semi/dram1H 2011Information Display (E-DID)• Performance Digital Information Display (P-DID) Display (B-DID)• Tablets• Notebooks/PCs• Monitors3DRAMddr3 SdrAM reGiStered ModuleSDensityVoltageOrganizationPart NumberCompositionComplianceSpeed (Mbps)RanksProduction1GB1.5V128Mx72M393B2873FH0-C(F8/H9/K0)(04/05)1Gb (128M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM393B2873GB0-C(F8/H9/K0/MA)(08/09)1Gb (128M x8) * 9Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM393B5673FH0-C(F8/H9/K0)(04/05)1Gb (128M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM393B5673GB0-C(F8/H9/K0/MA)(08/09)1Gb (128M x8) * 18Lead Free & Halogen Free, Flip Chip1066/1333/1600/18662Now2GB1.5V256Mx72M393B5670FH0-C(F8/H9/K0)(04/05)1Gb (256M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM393B5670GB0-C(F8/H9/K0/MA)(08/09)1Gb (256M x4) * 18Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM393B5773CH0-C(F8/H9/K0)(04/05)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM393B5773DH0-C(F8/H9/K0/MA)(08/09)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/1600/18661NowM393B5173FH0-C(F8/H9/K0)(04/05)1Gb (128M x8) * 36Lead Free & Halogen Free1066/1333/16004NowM393B5173GB0-C(F8/H9)(08/09)1Gb (128M x8) * 36Lead Free & Halogen Free, Flip Chip1066/13334NowM393B5170FH0-C(F8/H9/K0)(04/05)1Gb (256M x4) * 36Lead Free & Halogen Free1066/1333/16002Now4GB1.5V512Mx72M393B5170GB0-C(F8/H9/K0/MA)(08/09)1Gb (256M x4) * 36Lead Free & Halogen Free, Flip Chip1066/1333/1600/18662NowM393B5273CH0-C(F8/H9/K0)(04/05)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM393B5273DH0-C(F8/H9/K0/MA)(08/09)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/1600/18662NowM393B5270CH0-C(F8/H9/K0)(04/05)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM393B5270DH0-C(F8/H9/K0/MA)(08/09)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/1600/18661NowM393B1K73CH0-C(F8/H9)(04/05)2Gb (256M x8) * 36Lead Free & Halogen Free1066/13334Now8GB1.5V1Gx72M393B1K73DH0-C(F8/H9)(08/09)2Gb (256M x8) * 36Lead Free & Halogen Free1066/13334NowM393B1K70CH0-C(F8/H9/K0)(04/05)2Gb (512M x4) * 36Lead Free & Halogen Free1066/1333/16002NowM393B1K70DH0-C(F8/H9/K0/MA)(08/09)2Gb (512M x4) * 36Lead Free & Halogen Free1066/1333/1600/18662Now16GB1.5V2Gx72M393B2K70CM0-C(F8/H9)(04/05)2Gb DDP (1024M x4) * 36Lead Free & Halogen Free1066/13334NowM393B2K70DM0-C(F8/H9)(08/09)2Gb DDP (1024M x4) * 36Lead Free & Halogen Free1066/13334Now8GB1.5V1Gx72M393B1G70BH0-C(F8/H9/K0/MA)(08/09)4Gb (1G x4) * 18Lead Free & Halogen Free1066/1333/1600/18661NowM393B1G73BH0-C(F8/H9/K0/MA)(08/09)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/1600/18662NowM393B2G70AH0-C(F8/H9/K0)(04/05)4Gb (1024M x4) * 36Lead Free & Halogen Free1066/1333/16002Now16GB1.5V2Gx72M393B2G70BH0-C(F8/H9/K0)(08/09)4Gb (1024M x4) * 36Lead Free & Halogen Free1066/1333/16002NowM393B2G73AH0-C(F8/H9)(04/05)4Gb (512M x8) * 36Lead Free & Halogen Free1066/13334NowM393B2G73BH0-C(F8/H9)(08/09)4Gb (512M x8) * 36Lead Free & Halogen Free1066/13334Now32GB1.5V4Gx72M393B4G70AM0-C(F8/H9)(04/05)4Gb DDP (2048M x4) * 36Lead Free & Halogen Free1066/13334NowM393B4G70BM0-C(F8/H9)(08/09)4Gb DDP (2048M x4) * 36Lead Free & Halogen Free1066/13334Now8GB1.35V1Gx72M393B1G70BH0-Y(F8/H9/K0/MA)(08/09)4Gb (1G x4) * 18Lead Free & Halogen Free1066/1333/16001NowM393B1G73BH0-Y(F8/H9/K0/MA)(08/09)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM393B2G70AH0-Y(F8/H9)(04/05)4Gb (1024M x4) * 36Lead Free & Halogen Free1066/13332Now16GB1.35V2Gx72M393B2G70BH0-Y(F8/H9/K0)(08/09)4Gb (1024M x4) * 36Lead Free & Halogen Free1066/1333/16002NowM393B2G73AH0-Y(F8/H9)(04/05)4Gb (512M x8) * 36Lead Free & Halogen Free1066/13334NowM393B2G73AH0-Y(F8/H9)(04/05)4Gb (512M x8) * 36Lead Free & Halogen Free1066/13334Now32GB1.35V4Gx72M393B4G70AM0-Y(F8/H9)(04/05)4Gb DDP (2048M x4) * 36Lead Free & Halogen Free1066/13334NowM393B4G70BM0-Y(F8/H9)(08/09)4Gb DDP (2048M x4) * 36Lead Free & Halogen Free1066/13334Now2GB1.35V256Mx72M393B5773CH0-Y(F8/H9/K0)(04/05)2Gb (256M x4) * 9Lead Free & Halogen Free1066/1333/16001NowM393B5773DH0-Y(F8/H9/K0)(08/09)2Gb (256M x4) * 9Lead Free & Halogen Free1066/1333/16001NowM393B5173FH0-Y(F8/H9)(04/05)1Gb (128M x8) * 36Lead Free & Halogen Free1066/13334NowM393B5173GB0-Y(F8/H9)(08/09)1Gb (128M x8) * 36Lead Free & Halogen Free, Flip Chip1066/13334NowM393B5170FH0-Y(F8/H9/K0)(04/05)1Gb (256M x4) * 36Lead Free & Halogen Free1066/13332Now4GB1.35V512Mx72M393B5170GB0-Y(F8/H9/K0)(08/09)1Gb (256M x4) * 36Lead Free & Halogen Free, Flip Chip1066/1333/16002NowM393B5273CH0-Y(F8/H9/K0)(04/05)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM393B5273DH0-Y(F8/H9/K0)(08/09)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM393B5270CH0-Y(F8/H9/K0)(04/05)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM393B5270DH0-Y(F8/H9/K0)(08/09)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM393B1K73CH0-Y(F8/H9)(04/05)2Gb (256M x8) * 36Lead Free & Halogen Free1066/13334Now8GB1.35V1Gx72M393B1K73DH0-Y(F8/H9)(08/09)2Gb (256M x8) * 36Lead Free & Halogen Free1066/13334NowM393B1K70CH0-Y(F8/H9/K0)(04/05)2Gb (512M x4) * 36Lead Free & Halogen Free1066/1333/16002NowM393B1K70DH0-Y(F8/H9/K0)(08/09)2Gb (512M x4) * 36Lead Free & Halogen Free1066/1333/16002Now16GB1.35V2Gx72M393B2K70CM0-Y(F8/H9)(04/05)2Gb DDP (1024M x4) * 36Lead Free & Halogen Free1066/13334NowM393B2K70DM0-Y(F8/H9)(08/09)2Gb DDP (1024M x4) * 36Lead Free & Halogen Free1066/13334NowNotes:F7 = DDR3-800 (6-6-6) 04 = IDt B0 register F8 = DDR3-1066 (7-7-7) 05 = Inphi C0 register H9 = DDR3-1333 (9-9-9) 08 = IDt K0 = DDR3-1600 (11-11-11) 09 = Inphi
MA = DDR3-1866 (13-13-13) * K0 (1600Mbps) available in es only
4DDR3 SDRAM1H 2011samsung.com/semi/dramDensityVoltageOrganizationPart NumberM392B2873FH0-C(F8/H9/K0)(04/05)Composition1Gb (128M x8) * 9ComplianceLead Free & Halogen FreeSpeed (Mbps)1066/1333/1600Ranks1ProductionNowDRAddr3 SdrAM VlP reGiStered ModuleS1GB1.5V128Mx72M392B2873GB0-C(F8/H9/K0/MA)(08/09)1Gb (128M x8) * 9Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM392B5673FH0-C(F8/H9/K0)(04/05)1Gb (128M x8) * 18Lead Free & Halogen Free1066/1333/K02NowM392B5673GB0-C(F8/H9/K0/MA)(08/09)1Gb (128M x8) * 18Lead Free & Halogen Free, Flip Chip1066/1333/1600/18662Now2GB1.5V256Mx72M392B5670FH0-C(F8/H9/K0)(04/05)1Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16001NowM392B5670GB0-C(F8/H9/K0/MA)(08/09)1Gb (256M x8) * 18Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM392B5773CH0-C(F8/H9/K0)(04/05)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM392B5773DH0-C(F8/H9/K0/MA)(08/09)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/1600/18661NowM392B5170FM0-C(F8/H9/K0)(04/05)1Gb DDP (512M x4) * 18Lead Free & Halogen Free1066/1333/16002NowM392B5273CH0-C(F8/H9/K0)(04/05)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002Now4GB1.5V512Mx72M392B5273DH0-C(F8/H9/K0/MA)(08/09)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/1600/18662NowM392B5270CH0-C(F8/H9/K0)(04/05)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM392B5270DH0-C(F8/H9/K0/MA)(08/09)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/1600/18661NowM392B1K73CM0-C(F8/H9)(04/05)2Gb DDP (512M x8) * 18Lead Free & Halogen Free1066/13334NowM392B1K73DM0-C(F8/H9)(08/09)2Gb DDP (512M x8) * 18Lead Free & Halogen Free1066/13334Now8GB1.5V1Gx72M392B1K70CM0-C(F8/H9/K0)(04/05)2Gb DDP (1024M x4) * 18Lead Free & Halogen Free1066/1333/16002NowM392B1K70DM0-C(F8/H9/K0/MA)(08/09)2Gb DDP (1024M x4) * 18Lead Free & Halogen Free1066/1333/1600/18662NowM392B1G73BH0-C(F8/H9/K0/MA)(08/09)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/1600/18661NowM392B1G70BH0-C(F8/H9/K0/MA)(08/09)4Gb (1024M x4) * 18Lead Free & Halogen Free1066/1333/1600/18661NowM392B2G70AM0-C(F8/H9/K0)(04/05)4Gb DDP (2048M x4) * 18Lead Free & Halogen Free1066/1333/16002Now16GB1.5V2Gx72M392B2G70BM0-C(F8/H9/K0/MA)(08/09)4Gb DDP (2048M x4) * 18Lead Free & Halogen Free1066/1333/1600/18662NowM392B2G73AM0-C(F8/H9)(04/05)4Gb DDP (1024M x8) * 18Lead Free & Halogen Free1066/13334NowM392B2G73BM0-C(F8/H9)(08/09)4Gb DDP (1024M x8) * 18Lead Free & Halogen Free1066/13334Now8GB1.35V1Gx72M392B1G73BH0-Y(F8/H9/K0)(08/09)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/16001NowM392B1G70BH0-Y(F8/H9/K0)(08/09)4Gb (1024M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM392B2G70AM0-Y(F8/H9)(04/05)4Gb DDP (2048M x4) * 18Lead Free & Halogen Free1066/13332Now16GB1.35V2Gx72M392B2G70BM0-Y(F8/H9/K0)(08/09)4Gb DDP (2048M x4) * 18Lead Free & Halogen Free1066/1333/16002NowM392B2G70AM0-Y(F8/H9)(04/05)4Gb DDP (1024M x8) * 18Lead Free & Halogen Free1066/13334NowM392B2G70BM0-Y(F8/H9)(08/09)4Gb DDP (1024M x8) * 18Lead Free & Halogen Free1066/13334Now2GB1.35V256Mx72M392B5773CH0-Y(F8/H9/K0)(04/05)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM392B5773DH0-Y(F8/H9/K0)(08/09)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM392B5170FM0-Y(F8/H9/K0)(04/05)1Gb DDP (512M x4) * 18Lead Free & Halogen Free1066/1333/16002NowM392B5273CH0-Y(F8/H9/K0)(04/05)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002Now4GB1.35V512Mx72M392B5273DH0-Y(F8/H9/K0)(08/09)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM392B5270CH0-Y(F8/H9/K0)(04/05)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM392B5270DH0-Y(F8/H9/K0)(08/09)2Gb (512M x4) * 18Lead Free & Halogen Free1066/1333/16001NowM392B1K73CM0-Y(F8/H9/K0)(04/05)2Gb DDP (512M x8) * 18Lead Free & Halogen Free1066/1333/16004Now8GB1.35V1Gx72M392B1K73DM0-Y(F8/H9)(08/09)2Gb DDP (512M x8) * 18Lead Free & Halogen Free1066/13334NowM392B1K70CM0-Y(F8/H9/K0)(04/05)2Gb DDP (1024M x4) * 18Lead Free & Halogen Free1066/1333/16002NowM392B1K70DM0-Y(F8/H9/K0)(08/09)2Gb DDP (1024M x4) * 18Lead Free & Halogen Free1066/1333/16002NowNotes:F7 = DDR3-800 (6-6-6)K0 = DDR3-1600 (11-11-11)04 = IDt B0 register08 = IDt F8 = DDR3-1066 (7-7-7)MA = DDR3-1866 (13-13-13)
05 = Inphi C0 register
09 = Inphi
H9 = DDR3-1333 (9-9-9)
samsung.com/semi/dram1H 2011DDR3 SDRAM5ddr3 SdrAM unBuFFered ModuleS DensityVoltageOrganizationPart NumberCompositionComplianceSpeed (Mbps)RanksProduction1GB1.5V128Mx64M378B2873FH0-C(F8/H9/K0)1Gb (128M x8) * 8Lead Free & Halogen Free1066/1333/16001NowM378B2873GB0-C(F8/H9/K0/MA)1Gb (128M x8) * 8Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM378B5673FH0-C(F8/H9/K0)1Gb (128M x8) * 16Lead Free & Halogen Free1066/1333/16002Now2GB1.5V256Mx64M378B5673GB0-C(F8/H9/K0/MA)1Gb (128M x8) * 16Lead Free & Halogen Free, Flip Chip1066/1333/1600/18662NowM378B5773CH0-C(F8/H9/K0)2Gb (256M x8) * 8Lead Free & Halogen Free1066/1333/16001NowM378B5773DH0-C(F8/H9/K0/MA)2Gb (256M x8) * 8Lead Free & Halogen Free1066/1333/1600/18661NowM378B5273CH0-C(F8/H9/K0)2Gb (256M x8) * 16Lead Free & Halogen Free1066/1333/16002Now4GB1.5V512Mx64M378B5273DH0-C(F8/H9/K0/MA)2Gb (256M x8) * 16Lead Free & Halogen Free1066/1333/1600/18662Now1024Mx64M378B5173BH0-C(F8/H9/K0/MA)4Gb (512M x8) * 8Lead Free & Halogen Free1066/1333/1600/18661Now8GB1.5V1024Mx64M378B1G73AH0-C(F8/H9/K0)4Gb (512M x8) * 16Lead Free & Halogen Free1066/1333/16002NowM378B1G73BH0-C(F8/H9/K0/MA)4Gb (512M x8) * 16Lead Free & Halogen Free1066/1333/1600/18662Nowddr3 SdrAM unBuFFered ModuleS (ecc)DensityVoltageOrganizationPart NumberCompositionComplianceSpeed (Mbps)RanksProduction1GB1.5V128Mx72M391B2873FH0-C(F8/H9/K0)1Gb (128M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM391B2873GB0-C(F8/H9/K0/MA)1Gb (128M x8) * 9Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM391B5673FH0-C(F8/H9/K0) 1Gb (128M x8) * 18Lead Free & Halogen Free1066/1333/16002Now2GB1.5V256Mx72M391B5773CH0-C(F8/H9/K0)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM391B5773DH0-C(F8/H9/K0/MA)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/1600/18661Now4GB1.5V512Mx72M391B5273CH0-C(F8/H9/K0)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM391B5273DH0-C(F8/H9/K0/MA)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/1600/18662Now4GB1.5V1024Mx64M391B5173BH0-C(F8/H9/K0/MA)4Gb (512M x8) * 9Lead Free & Halogen Free1066/1333/1600/18661Now8GB1.5V1024Mx72M391B1G73AH0-C(F8/H9/K0)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM391B1G73BH0-C(F8/H9/K0/MA)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/1600/18662Now4GB1.35V1024Mx64M391B5173BH0-Y(F8/H9/K0)4Gb (512M x8) * 9Lead Free & Halogen Free1066/1333/16001Now8GB1.35V1024Mx72M391B1G73AH0-Y(F8/H9/K0)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM391B1G73BH0-Y(F8/H9/K0)4Gb (512M x8) * 18Lead Free & Halogen Free1066/1333/16002Now1GB1.35V128Mx72M391B2873FH0-Y(F8/H9/K0)1Gb (128M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM391B2873GB0-Y(F8/H9/K0)1Gb (128M x8) * 9Lead Free & Halogen Free, Flip Chip1066/1333/16001NowM391B5673FH0-Y(F8/H9/K0) 1Gb (128M x8) * 18Lead Free & Halogen Free1066/1333/16002Now2GB1.35V256Mx72M391B5773CH0-Y(F8/H9/K0)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001NowM391B5773DH0-Y(F8/H9/K0)2Gb (256M x8) * 9Lead Free & Halogen Free1066/1333/16001Now4GB1.35V512Mx72M391B5273CH0-Y(F8/H9/K0)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowM391B5273DH0-Y(F8/H9/K0)2Gb (256M x8) * 18Lead Free & Halogen Free1066/1333/16002NowNotes:F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)ddr3 SdrAM SodiMM ModuleSDensityVoltageOrganizationPart NumberCompositionComplianceSpeed (Mbps)RanksProduction1GB1.5V128Mx64M471B2873FHs-C(F8/H9/K0)1Gb (128M x8) * 8Lead Free & Halogen Free1066/1333/16001NowM471B2873GB0-C(F8/H9/K0/MA)1Gb (128M x8) * 8Lead Free & Halogen Free, Flip Chip1066/1333/1600/18661NowM471B5673FH0-C(F8/H9/K0)1Gb (128M x8) * 16Lead Free & Halogen Free1066/1333/16002Now2GB1.5V256Mx64M471B5673GB0-C(F8/H9/K0/MA)1Gb (128M x8) * 16Lead Free & Halogen Free, Flip Chip1066/1333/1600/18662NowM471B5773CHs-C(F8/H9/K0)2Gb (256M x8) * 8Lead Free & Halogen Free1066/1333/16001NowM471B5773DH0-C(F8/H9/K0/MA)2Gb (256M x8) * 8Lead Free & Halogen Free1066/1333/1600/18661Now4GB1.5V512Mx64M471B5273CH0-C(F8/H9/K0)2Gb (256M x8) * 16Lead Free & Halogen Free1066/1333/16002NowM471B5273DH0-C(F8/H9/K0/MA)2Gb (256M x8) * 16Lead Free & Halogen Free1066/1333/1600/18662Now4GB1.5V1024Mx64M471B5173BH0-C(F8/H9/K0)4Gb (512M x8) * 8Lead Free & Halogen Free1066/1333/16001Now8GB1.5V1024Mx64M471B1G73AH0-C(F8/H9/K0)4Gb (512M x8) * 16Lead Free & Halogen Free1066/1333/16002NowM471B1G73BH0-C(F8/H9/K0/MA)4Gb (512M x8) * 16Lead Free & Halogen Free1066/1333/1600/18662Now2GB1.35V256Mx64M471B5773CHs-Y(F8/H9)2Gb (256M x8) * 8Lead Free & Halogen Free1066/1333/16001NowM471B5773DH0-Y(F8/H9/K0)2Gb (256M x8) * 8Lead Free & Halogen Free1066/1333/16001Now4GB1.35V512Mx64M471B5273CH0-Y(F8/H9)2Gb (256M x8) * 16Lead Free & Halogen Free1066/1333/16002NowM471B5273DH0-Y(F8/H9/K0)2Gb (256M x8) * 16Lead Free & Halogen Free1066/1333/16002Now4GB1.35V1024Mx64M471B5173BH0-Y(F8/H9/K0)4Gb (512M x8) * 8Lead Free & Halogen Free1066/1333/16001Now8GB1.35V1024Mx64M471B1G73AH0-Y(F8/H9/K0)4Gb (512M x8) * 16Lead Free & Halogen Free1066/1333/16002NowM471B1G73BH0-Y(F8/H9/K0)4Gb (512M x8) * 16Lead Free & Halogen Free1066/1333/16002NowNotes:F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11)MA = DDR3-1866 (13-13-13)6DDR3 SDRAM1H 2011samsung.com/semi/dramDensityVoltageOrganizationPart NumberK4B1G0446F-HC(F8/H9/K0)# Pins-PackageCompliance78 Ball -FBGALead Free & Halogen FreeSpeed (Mbps)1066/1333/1600DimensionsProduction7.5x11mmNowDRAddr3 SdrAM coMPonentS1Gb1.5V256M x4K4B1G0446G-BC(F8/H9/K0/MA)78 Ball -FBGALead Free & Halogen Free, Flip Chip1066/1333/1600/18667.5x11mmNowK4B1G0846F-HC(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNow1Gb1.5V128M x8K4B1G0846G-BC(F8/H9/K0/MA)78 Ball -FBGALead Free & Halogen Free, Flip Chip1066/1333/1600/18667.5x11mmNow1Gb1.5V128M x16K4B1G1646G-BC(F8/H9/K0/MA/NB) 96 Ball -FBGALead Free & Halogen Free, Flip Chip1066/1333/1600/1866/21337.5x13.3mmNow2Gb1.5V512M x4K4B2G0446C-HC(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B2G0446D-HC(F8/H9/K0/MA)78 Ball -FBGALead Free & Halogen Free1066/1333/1600/18667.5x11mmNow2Gb1.5V256M x8K4B2G0846C-HC(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B2G0846D-HC(F8/H9/K0/MA)78 Ball -FBGALead Free & Halogen Free1066/1333/1600/18667.5x11mmNow2Gb1.5V128Mx16K4B2G1646C-HC(F8/H9/K0/MA)96 Ball -FBGALead Free & Halogen Free1066/1333/1600/18667.5x13.3mmNow4Gb1.5V1024M x4K4B4G0446A-HC(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B4G0446B-HC(F8/H9/K0/MA)78 Ball -FBGALead Free & Halogen Free1066/1333/1600/18667.5x11mmNow4Gb1.5V512M x8K4B4G0846A-HC(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B4G0846B-HC(F8/H9/K0/MA)78 Ball -FBGALead Free & Halogen Free1066/1333/1600/18667.5x11mmNowK4B1G0446F-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNow1Gb1.35V256M x4K4B1G0446G-BY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free, Flip Chip1066/1333/16007.5x11mmNowK4B1G0846F-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/13337.5x11mmNow1Gb1.35V128M x8K4B1G0846G-BY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free, Flip Chip1066/1333/16007.5x11mmNow2Gb1.35V512M x4K4B2G0446C-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B2G0446D-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNow2Gb1.35V256M x8K4B2G0846C-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B2G0846D-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNow4Gb1.35V1024M x4K4B4G0446A-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B4G0446B-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNow4Gb1.35V512M x8K4B4G0846A-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowK4B4G0846B-HY(F8/H9/K0)78 Ball -FBGALead Free & Halogen Free1066/1333/16007.5x11mmNowNotes:F7 = DDR3-800 (6-6-6)H9 = DDR3-1333 (9-9-9)MA = DDR3-1866 (13-13-13)* MA, and NB are available in es onlyF8 = DDR3-1066 (7-7-7)K0 = DDR3-1600 (11-11-11)
NB = DDR3-2133 (14-14-14)
ddr2 SdrAM reGiStered ModuleSDensityOrganizationPart NumberCompositionComplianceSpeed (Mbps)RegisterRankProduction1GB128Mx72M393t2863FBA-C(e6/F7)(128M x8)*9Lead free667/800Y1Now2GB256Mx72M393t5660FBA-C(e6/F7)(256M x4)*18Lead free667/800Y1NowM393t5663FBA-C(e6/e7)(128M x8)*18Lead free667/800Y2Now4GB512Mx72M393t5160FBA-C(e6/F7)(256M x4)*36Lead free667/800Y2NowNotes:e6 = PC2-5300 (DDR2-667 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6)e7 = PC2-6400 (DDR2-800 @ CL=5)Voltage = 1.8Vddr2 SdrAM VlP reGiStered ModuleSDensityOrganizationPart NumberCompositionComplianceSpeed (Mbps)RegisterRankProduction2GB256Mx72M392t5660FBA-Ce6(256M x4)*18Lead free667Y1Nowddr2 SdrAM FullY BuFFered ModuleSDensityOrganizationPart NumberCompositionComplianceSpeed (Mbps)VoltageRankProduction2GB256Mx72M395t5663FB4-Ce68(128M x8)*18Lead free6671.8V2Now4GB512Mx72M395t5160FB4-Ce68(256M x4)*36Lead free6671.8V2NowM395t5163FB4-Ce68(128M x8)*36Lead free6671.8V4NowNotes:e6 = PC2-5300 (DDR2-667 @ CL=5) Voltage = 1.8V (AMB Voltage = 1.5V)AMB = IDt L4samsung.com/semi/dram1H 2011DDR3 & DDR2 SDRAM7ddr2 SdrAM unBuFFered ModuleS DensityOrganizationPart NumberCompositionComplianceSpeed (Mbps)RankProduction1GB128Mx64M378t2863FBs-C(e6/F7/e7)(128M x8)*8Lead free667/8001Now2GB256Mx64M378t5663FB3-C(e6/F7/e7)(128M x8)*16Lead free667/8002NowNotes:e6 = PC2-5300 (DDR2-667 @ CL=5)e7 = PC2-6400 (DDR2-800 @ CL=5)F7 = PC2-6400 (DDR2-800 @ CL=6)Voltage = 1.8Vddr2 SdrAM unBuFFered ModuleS (ecc)DensityOrganizationPart NumberCompositionComplianceSpeed (Mbps)RankProduction1GB128Mx72M391t2863FB3-C(e6/F7)(128Mx8)*9Lead free667/8001Now2GB256Mx64M391t5663FB3-C(e6/F7)(128Mx8)*18Lead free667/8002NowNotes:e6 = PC2-5300 (DDR2-667 @ CL=5)F7 = PC2-6400 (DDR2-800 @ CL=6)e7 = PC2-6400 (DDR2-800 @ CL=5)Voltage = 1.8V
ddr2 SdrAM SodiMM ModuleSDensityOrganizationPart NumberCompositionComplianceSpeed (Mbps)RankProduction1GB128Mx64M470t2863FB3-C(e6/F7/e7)(64Mx16)*8Lead free667/8002Now2GB256Mx64M470t5663FB3-C(e6/F7/e7)(128M x8)*8Lead free667/8002NowNotes:e6 = PC2-5300 (DDR2-667 @ CL=5)F7 = PC2-6400 (DDR2-800 @ CL=6)e7 = PC2-6400 (DDR2-800 @ CL=5)Voltage = 1.8V
ddr2 SdrAM coMPonentSDensityOrganizationPart Number# Pins-PackageDimensionsPackageSpeed (Mbps)Production256Mb16Mx16K4t56163QN-HC(e6/F7/e7/F8)84-FBGA7.5x12.5mmLead free & Halogen free 667/800/1066Now128M x4K4t51043QI-HC(e6/F7/e7)60-FBGA7.5x9.5mmLead free & Halogen free 667/800Now64M x8K4t51083QI-HC(e6/F7/e7/F8)60-FBGA7.5x9.5mmLead free & Halogen free 667/800/1066Now512Mb32M x16K4t51163QI-HC(e6/F7/e7/F8)84-FBGA7.5x12.5mmLead free & Halogen free 667/800/1066Now128M x4K4t51043QJ-HC(e6/F7/e7)60-FBGA7.5x9.5mmLead free & Halogen free 667/800Q364M x8K4t51083QJ-HC(e6/F7/e7/F8)60-FBGA7.5x9.5mmLead free & Halogen free 667/800/1066Q332M x16K4t51163QJ-HC(e6/F7/e7/F8)84-FBGA7.5x12.5mmLead free & Halogen free 667/800/1066Q3256M x4K4t1G044QF-BC(e6/F7/e7)60-FBGA7.5x9.5mmLead free & Halogen free 667/800Now1Gb128M x8K4t1G084QF-BC(e6/F7/e7/F8)60-FBGA7.5x9.5mmLead free & Halogen free 667/800/1066Now64M x16K4t1G164QF-BC(e6/F7/e7/F8)84-FBGA7.5x12.5mmLead free & Halogen free 667/800/1066NowNotes:e6 = DDR2-667 (5-5-5)F8 = DDR2-1066 (7-7-7)Package TypeF7 = DDR2-800 (6-6-6)Voltage = 1.8V
H = FBGA (Lead-free & Halogen-free)
e7 = DDR2-800 (5-5-5)
B = FBGA (Lead-free & Halogen-free, Flip Chip)
ddr SdrAM coMPonentSDensityOrganizationPart Number# Pins - PackageSpeed (Mbps)128Mx4K4H510438J-LCB3/B066-tsoP266/333K4H510438J-HCCC/B360-FBGA333/400512Mb64Mx8K4H510838J-LCCC/B366-tsoP333/400K4H510838J-HCCC/B360-FBGA333/40032Mx16K4H511638J-LCCC/B366-tsoP333/40064Mx4K4H560438N-LCB3/B066-tsoP266/333256Mb32Mx8K4H560838N-LCCC/B366-tsoP333/40016Mx16K4H561638N-LCCC/B366-tsoP333/400128Mb8Mx16K4H281638o-LCCC66-tsoP400Notes:B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)SdrAM coMPonentSDensityOrganizationPart Number# Pins - PackageSpeed (Mbps)Refresh64Mx4K4s560432N-LC(L)7500054-tsoP1338K256Mb32Mx8K4s560832N-LC(L)7500054-tsoP1338K16Mx16K4s561632N-LC(L)(75/60)00054-tsoP133/1668K128Mb16Mx8K4s280832o-LC(L)7500054-tsoP1334K8Mx16K4s281632o-LC(L)(75/60)00054-tsoP133/1664KNotes:L = Commercial temp., Low PowerBanks: 4 Voltage: 3.3VFor Industrial temperature, check with ssI Marketing All products are Lead Free
speed: PC133 (133MHz CL=3/PC100 CL2)
8DDR2, DDR & SDRAM Components1H 2011samsung.com/semi/dramTypeMsDRDensity512MbOrganization32Mx16Part NumberK4M51163PI-BG(1)Package54-FBGAPower1.8VProductionNowDRAMoBile drAM coMPonentS16Mx32K4M51323PI-HG(1)90-FBGA1.8VNow256Mb16Mx16K4X56163PN-FG(1)60-FBGA1.8VNow8Mx32K4X56323PN-8G(1)90-FBGA1.8VNow512Mb32Mx16K4X51163PI-FG(1)60-FBGA1.8VNowMDDR16Mx32K4X51323PI-8G(1)90-FBGA1.8VNow1Gb32Mx32K4X1G323PF-8G(1)90-FBGA1.8VNow2Gb64Mx32K4X2G323PC-8G(1)90-FBGA1.8VNow4Gbx32 (2Cs, 2CKe)K4X4G303PC-AG(1)168-FBGA, 12x12 PoP, DDP1.8VNowx32 (2Cs, 2CKe)K4X4G303PC-7G(1)240-FBGA, 14x14 PoP, DDP1.8VNow1Gb1CH x32K4P1G324ee-AG(1)168-FBGA, 12x12 PoP1.2VNow2Gb1CH x32K4P2G324eC-AG(1)168-FBGA, 12x12 PoP1.2VNow2CH x32/chK3Pe3e300M-XG(1)216-FBGA, 12x12 PoP1.2VNow1CH x32K4P4G304eC-AG(1)168-FBGA, 12x12 PoP, DDP, 64Mx32*21.2VNow1CH x32K4P4G154eC-FG(1)134-FBGA, 11x11.5 PoP, DDP, 128x16*21.2VNow4Gb1CH x32K4P4G324eB-FG(1)168-FBGA, 12x12 PoP, MoNo, 128Mx321.2VNowLPDDR22CH x32/chK3Pe4e400M-XG(1)216-FBGA, 12x12 PoP, QDP, 64Mx32*21.2VNow2CH x32/chK3Pe4e400A-XG(1)240-FBGA, 14x14 PoP, QDP, 64Mx32*21.2VNow1CH x32K4P8G304eC-FC(1)134-FBGA, 11x11.5 PoP, QDP, 128x16*41.2VNow8Gb2CH x32/chK3Pe8e800M-XG(1)216-FBGA, 12x12 PoP, QDP, 64Mx32*41.2VNow2CH x32/chK3Pe7e700M-XG(1)216-FBGA, 12x12 PoP, DDP, 128Mx32*21.2VNow2CH x32/chK3Pe7e700A-XG(1)240-FBGA, 14x14 PoP, DDP, 128Mx32*21.2VNow16Gb2CH x32/chK3Pe0e00M-XG(1)216-FBGA, 12x12 PoP, QDP, 128Mx32*41.2VNowNotes:(1) Speed:All products offered at extended, Low, i-tCsR & PAsR & Ds (temp, Power)Mobile-sDR
60: 166MHz, CL3 Mobile-DDR
LPDDR2
D8: 200MHz, CL3 C1: 800Mbps
75: 133MHz, CL3
C6: 166MHz, CL3
GrAPHicS drAM coMPonentSTypeDensityOrganizationPart NumberPackageVDD/VDDQSpeed Bin (MHz)K4G20325FC-HC(1)170-FBGA1.5/1.5V2000/2500/30002Gb64Mx32K4G20325FC-HC04 170-FBGA1.35V/1.35V1800GDDR5K4G20325FC-HC03 170-FBGA1.35V/1.35V20001Gb32Mx32K4G10325Fe-HC(1) 170-FBGA1.5/1.5V2000/2500K4G10325Fe-HC04 170-FBGA1.35V/1.35V1800GDDR31Gb32Mx32K4J10324Ke-HC(1) 136-FBGA1.8V/1.8V700/800/1000/1200512Mb16Mx32K4J52324KI-HC(1) 136-FBGA1.8/1.8V700/800/1000gDDR32Gb128Mx16K4W2G1646C-HC(1)96 FBGA1.5V/1.5V800/933/10661Gb64Mx16K4W1G1646G-BC(1)96 FBGA1.5V/1.5V800/933/1066gDDR21Gb64Mx16K4N1G164Qe-HC(1) 84-FBGA 1.8/1.8V400/500Notes:Package(1) Speeds (clock cycle - speed bin)H: FBGA (Halogen Free & Lead Free)B: FBGA (Halogen Free & Lead Free)
03: 0.3ns (3000MHz)5C: 0.555 (1800MHz) 1A: 1ns (1066MHz gDDR3)14: 1.429ns (700MHz)04: 0.4ns (2500MHz)08: 0.83ns (1200MHz) 11: 1.1ns (933MHz) 20: 2.0ns (500MHz)05: 0.5ns (2000MHz)1A: 1ns (1000MHz GDDR3)
12: 1.25ns (800MHz)25: 2.5ns (400MHz)
samsung.com/semi/dram1H 2011Mobile & Graphics DRAM Components9coMPonent drAM orderinG inForMAtion1 2 3 4 5 6 7 8 910 11K 4 T XX XX X X X X X XXSAMSUNG MemorySpeedDRAMTemp & PowerDRAM TypePackage TypeDensityRevisionBit OrganizationInterface (VDD, VDDQ)Number of Internal Banks1. Memory (K)08: x8 9. Package Type15: x16 (2Cs)2. DRAM: 416: x16 DDR SDRAM3. DRAM Type26: x4 stack (JeDeC standard)L: tsoP II (Lead-free & Halogen-free)27: x8 stack (JeDeC standard)H: FBGA (Lead-free & Halogen-free)B: DDR3 sDRAM30: x32 (2Cs, 2CKe)F: FBGA for 64Mb DDR (Lead-free & Halogen-free)D: GDDR sDRAM31: x32 (2Cs) 6: stsoP II (Lead-free & Halogen-free)G: GDDR5 sDRAM32: x32 t: tsoP IIH: DDR sDRAM6. # of Internal BanksN: stsoP IIJ: GDDR3 sDRAMG: FBGAM: Mobile sDRAM2: 2 BanksU: tsoP II (Lead-free)N: sDDR2 sDRAM3: 4 BanksV: stsoP II (Lead-free)s: sDRAM4: 8 Banks Z: FBGA (Lead-free)t: DDR sDRAM 5: 16 BanksDDR2 SDRAMU: GDDR4 sDRAM7. Interface ( VDD, VDDQ)Z: FBGA (Lead-free)V: Mobile DDR sDRAM Power efficient Address2: LVttL, 3.3V, 3.3VJ: FBGA DDP (Lead-free)W: sDDR3 sDRAM4: LVttL, 2.5V, 2.5VQ: FBGA QDP (Lead-free)X: Mobile DDR sDRAM5: sstL-2 1.8V, 1.8VH: FBGA (Lead-free & Halogen-free)Y: XDR DRAM6: sstL-15 1.5V, 1.5VM: FBGA DDP (Lead-free & Halogen-free)Z: Value Added DRAM8: sstL-2, 2.5V, 2.5Ve: FBGA QDP (Lead-free & Halogen-free)4. DensityA: sstL, 2.5V, 1.8Vt: FBGA DsP (Lead-free & Halogen-free, thin)10: 1G, 8K/32msF: PoD-15 (1.5V,1.5V)DDR3 SDRAM16: 16M, 4K/64msH: sstL_2 DLL, 3.3V, 2.5VZ: FBGA (Lead-free)26: 128M, 4K/32msM: LVttL, 1.8V, 1.5VH: FBGA (Halogen-free & Lead-free)28: 128M, 4K/64msN: LVttL, 1.5V, 1.5VGraphics Memory32: 32M, 2K/32msP: LVttL, 1.8V, 1.8VQ: tQFP50: 512M, 32K/16msQ: sstL-2 1.8V, 1.8VU: tQFP (Lead Free)51: 512M, 8K/64msR: sstL-2, 2.8V, 2.8VG: 84/144 FBGA52: 512M, 8K/32msU: DRsL, 1.8V, 1.2VV: 144 FBGA (Lead Free)54: 256M, 16K/16ms8. RevisionZ: 84 FBGA(Lead Free)55: 256M, 4K/32mst: tsoP56: 256M, 8K/64msA: 2nd GenerationL: tsoP (Lead Free)62: 64M, 2K/16msB: 3rd GenerationA: 136 FBGA64: 64M, 4K/64msC: 4th GenerationB: 136 FBGA(Lead Free)68: 768M, 8K/64msD: 5th GenerationH: FBGA(Hologen Free & Lead Free)1G: 1G, 8K/64mse: 6th Generatione: 100 FBGA(Hologen Free & Lead Free)2G: 2G, 8K/64msF: 7th GenerationSDRAM4G: 4G, 8K/64msG: 8th GenerationH: 9th GenerationL tsoP II (Lead-free & Halogen-free)5. Bit OrganizationI: 10th GenerationN: stsoP IIt: tsoP II02: x2 J: 11th GenerationU: tsoP II (Lead-free)04: x4K: 12th GenerationV: stsoP II (Lead-free)06: x4 stack (Flexframe)M: 1st Generation07: x8 stack (Flexframe)N: 14th GenerationQ: 17th Generation10DRAM Ordering Information1H 2011samsung.com/semi/dram1 2 3 4 5 6 7 8 910 11K 4 T XX XX X X X X X XXDRAcoMPonent drAM orderinG inForMAtionSAMSUNG MemorySpeedDRAMTemp & PowerDRAM TypePackage TypeDensityRevisionBit OrganizationInterface (VDD, VDDQ)Number of Internal BanksXDR DRAMDDR2 SDRAM1 : 1.1ns (900MHz)J: BoC(LF) P: BoCCC: DDR2-400 (200MHz @ CL=3, tRCD=3, 55: 5.5ns (183MHz) Mobile DRAMtRP=3)12: 1.25ns (800MHz)Leaded / Lead FreeD5: DDR2-533 (266MHz @ CL=4, tRCD=4, 60: 6.0ns (166MHz) G/A: 52balls FBGA MonotRP=4)14: 1.4ns (700MHz)R/B: 54balls FBGA Monoe6: DDR2-667 (333MHz @ CL=5, tRCD=5, 16: 1.6ns (600MHz)X /Z: 54balls BoC MonotRP=5)SDRAM (Default CL=3)J /V: 60(72)balls FBGA Mono 0.5pitchF7: DDR2-800 (400MHz @ CL=6, tRCD=6, 50: 5.0ns (200MHz CL=3)L /F: 60balls FBGA Mono 0.8pitchtRP=6)60: 6.0ns (166MHz CL=3)s/D: 90balls FBGAe7: DDR2-800 (400MHz @ CL=5, tRCD=5, 67: 6.7nsMonolithic (11mm x 13mm)tRP=5)75: 7.5ns PC133 (133MHz CL=3)F/H: smaller 90balls FBGA MonoDDR3 SDRAMY/P: 54balls CsP DDPF7: DDR3-800 (400MHz @ CL=6, tRCD=6, XDR DRAMM/e: 90balls FBGA DDPtRP=6)A2: 2.4Gbps, 36ns, 16CyclesF8: DDR3-1066 (533MHz @ CL=7, tRCD=7, B3: 3.2Gbps, 35ns, 20Cycles10. Temp & Power - COMMON tRP=7)C3: 3.2Gbps, 35ns, 24Cycles (Temp, Power)G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, C4: 4.0Gbps, 28ns, 24CyclesC: Commercial, Normal (0’C – 95’C) & Normal tRP=8)Ds: Daisychain samplePowerH9: DDR3-1333 (667MHz @ CL=9, tRCD=9, Mobile-SDRAMC: (Mobile only) Commercial (-25 ~ 70’C), Normal tRP=9)60: 166MHz, CL 3PowerK0: DDR3-1600 (800MHz @ CL=11, tRCD=11, 75: 133MHz, CL 3J: Commercial, MediumtRP=11)80: 125MHz, CL 3L: Commercial, Low (0’C – 95’C) & Low PowerGraphics Memory1H: 105MHz, CL 2L: (Mobile only) Commercial, Low, i-tCsR18: 1.8ns (550MHz) 1L: 105MHz, CL 3F: Commercial, Low, i-tCsR & PAsR & Ds04: 0.4ns (2500MHz)15: 66MHz, CL 2 & 3e: extended (-25~85’C), Normal20: 2.0ns (500MHz) Mobile-DDRN: extended, Low, i-tCsR 05: 0.5ns (2000MHz)C3: 133MHz, CL 3G: extended, Low, i-tCsR & PAsR & Ds22: 2.2ns (450MHz) C2: 100MHz, CL 3I: Industrial, Normal (-40’C – 85’C) & Normal 5C: 0.56ns (1800MHz)C0: 66MHz, CL 3Power25: 2.5ns (400MHz) Note: All of Lead-free or Halogen-free product are in P: Industrial, Low (-40’C – 85’C) & Low Power06: 0.62ns (1600MHz)compliance with RoHsH: Industrial, Low, i-tCsR & PAsR & Ds2C: 2.66ns (375MHz) 11. Speed (Wafer/Chip Biz/BGD: 00)6A: 0.66ns (1500MHz)2A: 2.86ns (350MHz) DDR SDRAM07: 0.71ns (1400MHz)CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)33: 3.3ns (300MHz) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, 7A: 0.77ns (1300MHz)tRP=3) *136: 3.6ns (275MHz) A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)08: 0.8ns (1200MHz)B0: DDR266 (133MHz @ CL=2.5, tRCD=3, 40: 4.0ns (250MHz) tRP=3)09: 0.9ns (1100MHz)Note 1: \"B3\" has compatibility with \"A2\" and \"B0\"45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz)50/5A: 5.0ns (200MHz)samsung.com/semi/dram1H 2011DRAM Ordering Information11Module drAM orderinG inForMAtion1 2 3 4 5 6 7 8 910 111213M X XXTXX X X X X X XXXXSAMSUNG MemoryAMB VendorDIMMSpeedData bitsTemp & PowerDRAM Component TypePCB RevisionDepthPackageNumber of BanksComponent RevisionBit Organization1. Memory Module: M5. Depth9. Package2. DIMM Type09: 8M (for 128Mb/512Mb)e: FBGA QDP (Lead-free & Halogen-free)17: 16M (for 128Mb/512Mb)G: FBGA3: DIMM16: 16MH: FBGA (Lead-free & Halogen-free)4: soDIMM28: 128MJ: FBGA DDP (Lead-free)3. Data bits29: 128M (for 128Mb/512Mb)M: FBGA DDP (Lead-free & Halogen-free)12: x72 184pin Low Profile Registered DIMM32: 32M N: stsoP63: x63 PC100 / PC133 μsoDIMM with sPD for 33: 32M (for 128Mb/512Mb)Q: FBGA QDP (Lead-free)144pin51: 512M t: tsoP II (400mil)64: x64 PC100 / PC133 soDIMM with sPD for 52: 512M (for 512Mb/2Gb)U: tsoP II (Lead-Free)144pin (Intel/JeDeC)56: 256M V: stsoP II (Lead-Free)66: x64 Unbuffered DIMM with sPD for 57: 256M (for 512Mb/2Gb)Z: FBGA(Lead-free)144pin/168pin (Intel/JeDeC)59: 256M (for 128Mb/512Mb)64: 64M 10. PCB Revision68: x64 184pin Unbuffered DIMM65: 64M (for 128Mb/512Mb)0: Mother PCB70: x64 200pin Unbuffered soDIMM1G: 1G 1: 1st Rev71: x64 204pin Unbuffered soDIMM1K: 1G (for 2Gb)2: 2nd Rev.74: x72 /eCC Unbuffered DIMM with sPD for 168pin (Intel/JeDeC)6. # of Banks in Comp. & Interface3: 3rd Rev.4: 4th Rev.77: x72 /eCC PLL + Register DIMM with sPD for 1: 4K/64mxRef., 4Banks & sstL-2A: Parity DIMM168pin (Intel PC100)2 : 8K/ 64ms Ref., 4Banks & sstL-2s: Reduced PCB78: x64 240pin Unbuffered DIMM2: 4K/ 64ms Ref., 4Banks & LVttL (sDR only)U: Low Profile DIMM81: x72 184pin eCC unbuffered DIMM5: 8K/ 64ms Ref., 4Banks & LVttL (sDR only)83: x72 184pin Registered DIMM5: 4Banks & sstL-1.8V11. Temp & Power90: x72 /eCC PLL + Register DIMM6: 8Banks & sstL-1.8VC: Commercial temp. (0°C ~ 95°C) & Normal 91: x72 240pin eCC unbuffered DIMM92: x72 240pin VLP Registered DIMM7. Bit Organization PowerL: Commercial temp. (0°C ~ 95°C) & Low Power93: x72 240pin Registered DIMM0: x 495: x72 240pin Fully Buffered DIMM with sPD for 3: x 812. Speed168pin (JeDeC PC133)4: x16CC: (200MHz @ CL=3, tRCD=3, tRP=3)4. DRAM Component Type6: x 4 stack (JeDeC standard)D5: (266MHz @ CL=4, tRCD=4, tRP=4)7: x 8 stack (JeDeC standard)e6: (333MHz @ CL=5, tRCD=5, tRP=5)B: DDR3 sDRAM (1.5V VDD)8: x 4 stackF7: (400MHz @ CL=6, tRCD=6, tRP=6)L: DDR sDRAM (2.5V VDD)9: x 8 stacke7: (400MHz @ CL=5, tRCD=5, tRP=5)s: sDRAMF8: (533MHz @ CL=7, tRCD=7, tRP=7)t: DDR2 sDRAM (1.8V VDD)8. Component RevisionG8: (533MHz @ CL=8, tRCD=8, tRP=8)A: 2nd Gen.H9: (667MHz @ CL=9, tRCD=9, tRP=9)B: 3rd Gen. K0: (800MHz @ CL=10, tRCD=10, tRP=10)C: 4th Gen.7A: (133MHz CL=3/PC100 CL2)D: 5th Gen. e: 6th Gen.13. AMB Vendor for FBDIMMF: 7th Gen. 0, 5: IntelG: 8th Gen.1, 6, 8: IDtM: 1st Gen. 9: MontageQ: 17th Gen.Note: All of Lead-free or Halogen-free product are in compliance with RoHs12DRAM Ordering Information1H 2011samsung.com/semi/dramSlc FlASHMOQFamilyDensityPart NumberK9QDGD8s5M-HCB*128Gb oDPK9QDGD8U5M-HCB*K9QDG08U5M-HCB*K9WCGD8s5M-HCB*64Gb QDP16Gb BasedK9WCGD8U5M-HCB*K9WCG08U5M-HCB*K9WCG08U5M-HIB*Package TypeBGABGABGABGABGABGABGAOrg.x8x8x8x8x8x8x8Vol(V)1.83.33.31.83.33.33.3Tray-xxxx0xx960960960960960960960T/R-xxx0Txx1000100010001000100010001000C/sC/sC/sC/sC/sC/sC/sStatusASHK9KBGD8s1M-HCB*BGAx81.89601000C/sK9KBGD8U1M-HCB*BGAx83.39601000C/s32Gb DDPK9KBGD8U1M-HIB*BGAx83.39601000C/sK9KBG08U1M-HCB*BGAx83.39601000C/sK9KBG08U1M-HIB*BGAx83.39601000C/s16Gb MonoK9FAG08U0M-HCB*BGAx83.39601000C/sK9FAG08U0M-HIB*BGAx83.39601000C/sK9WAG08U1D-sCB0tsoP1 HF&LFx83.39601000C/sK9WAG08U1D-sIB0tsoP1 HF&LFx83.39601000C/s16Gb QDPK9WAG08U1B-PCB0tsoP1x83.39601000eoL scheduled K9WAG08U1B-PIB0tsoP1x83.39601000eoL scheduled K9WAG08U1B-KIB0ULGA HF & LFx83.39602000eoL scheduled K9K8G08U0D-sCB0tsoP1 HF&LFX83.39601000C/sK9K8G08U0D-sIB0tsoP1 HF&LFx83.39601000C/s4Gb Based8Gb DDPK9K8G08U0B-PCB0tsoP1x83.39601000eoL scheduled K9K8G08U0B-PIB0tsoP1x83.39601000eoL scheduled K9K8G08U1B-KIB0ULGA HF & LFx83.39602000eoL scheduled K9F4G08U0D-sCB0tsoP1 HF & LFx83.39601000C/sK9F4G08U0D-sIB0tsoP1 HF& LFX83.39601000C/s4Gb MonoK9F4G08U0B-PCB0tsoP1x83.39601000eoL scheduled K9F4G08U0B-PIB0tsoP1x83.39601000eoL scheduled K9F4G08U0B-KIB0ULGA HF & LFx83.39602000eoL scheduled K9F2G08U0C-sCB0tsoP-LF/HFx83.39601000C/s2Gb Based2Gb MonoK9F2G08U0C-sIB0tsoP-LF/HFx83.39601000C/sK9F2G08U0B-PCB0tsoP1x83.39601000eoL scheduled K9F2G08U0B-PIB0tsoP1x83.39601000eoL scheduled K9F1G08U0D-sCB0tsoP-LF/HFx83.39601000C/s1Gb Based1Gb MonoK9F1G08U0D-sIB0tsoP-LF/HFx83.39601000C/sK9F1G08U0C-PCB0tsoP1x83.39601000eoL scheduled K9F1G08U0C-PIB0tsoP1x83.39601000eoL scheduled *D=DDR and 0=sDR Please contact your local samsung sales representative for latest product offerings.Note: All parts are lead free
samsung.com/semi/flash1H 2011SLC Flash13LFMlc FlASHMOQTypeFamilyDensityTechnologyPart NumberPackage TypeOrg.Vol(V)TrayT/RStatus-xxxx0xx-xxx0Txx256Gb oDP32nm ep-MLCK9PFGD8U5M-HCe*BGAx83.3720-C/s Now32Gb Based128Gb QDP32nm ep-MLCK9HDGD8U5M-HCe*BGAx83.3720-C/s Now64Gb DDP32nm ep-MLCK9LCGD8U1M-HCe*BGAx83.3720-C/s Now64Gb Based256Gb oDP35nmK9ACGD8U0M-sCB*52LGAx83.37202000MP128Gb QDP27nmK9HDG08U1A-sCB*48tsoPx83.39601000MP2bit32Gb Based64Gb DDP27nmK9LCG08U0A-sCB*48tsoPx83.39601000MP32Gb mono27nmK9GBG08U0A-sCB*48tsoPx83.39601000MP64Gb QDP32nmK9HCG08U1e-sCB*48tsoPx83.39601000MP16GB Based32Gb DDP32nmK9LBG08U0e-sCB*48tsoPx83.39601000MP16Gb mono32nmK9GAG08U0e-sCB*48tsoPx83.39601000MP8Gb Based8Gb32nmK9G8G08U0C-sCB*48tsoPx83.39601000MP256Gb QDP3bit_27nm DDRK9CFGD8U1M-sCB*tsoPx83.3960-C/s Now3bit64Gb Based128Gb DDP3bit_27nm DDRK9BDGD8U0M-sCB*tsoPx83.3960-C/s Now64Gb mono3bit_27nm DDRK9ACGD8U0M-sCB*tsoPx83.3960-C/s Now*D=DDR and 0=sDRPlease contact your local samsung sales representative for latest product offerings.Note: All parts are lead freeSd and MicroSd FlASH cArdSApplicationDensity2GB4GBsD Cards8GB16GB32GB2GB4GBusD Cards8GB16GB32GBPlease contact your local samsung sales representative for part numbers and latest product offerings.movinAnd™ (eMMc)DensityPart NumberPackage TypeOrg.Vol (V)Status2GBKLM2G1DeHe-B101xxx11.5x13x81.8/3.3C/s MP4GBKLM4G1FeQA-A001xxx12x16x81.8/3.3Cs-April8GBKLMCGAFeJA-B001xxx12x16x81.8/3.3C/s MP16GBKLMBG8FeJA-A001xxx12x16x81.8/3.3C/s MP32GBKLMAG4FeJA-A001xxx12x16x81.8/3.3C/s MP64GBKLM8G2FeJA-A001xxx14x18x81.8/3.3C/s MPSolid StAte driVeS (SSd) Interface Size Connector Controller ComponentDensityPart Number2.5\" 64GBMZ7PA064HMCD-010007mmtthin sAtAPM81016Gb128GBMZ7PA128HMCD-01000256GBMZ7PA256HMDR-010002.5\"64GBMZ5PA064HMCD-01000sAtA II - MLC9.5mmt thin sAtAPM81016Gb128GBMZ5PA128HMCD-01000256GBMZ5PA256HMDR-0100032GBMZMPA032HMCD-00000msAtAPClePM81016Gb64GBMZMPA064HMDR-00000128GBMZMPA128HMFU-00000Please contact your local samsung sales representative for latest product offeringsNote: All parts are lead free14MLC Flash, SD/MicroSD Flash, moviNAND & SSD1H 2011samsung.com/semi/flashFlASH Product orderinG inForMAtion1 2 3 4 5 6 7 8 910 1112131415K SAMSUNG MemoryNAND FlashSmall ClassificationDensityDensityOrganizationOrganizationVcc9 XXX X X X X X -XXXX Pre-Program VersionCustomer Bad BlockTempPackage---GenerationModeASH1. Memory (K)8. Vcc13. Temp2. NAND Flash : 9A : 1.65V~3.6V B : 2.7V (2.5V~2.9V)C : Commercial I : IndustrialC : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V)0 : NoNe (Containing Wafer, CHIP, BIZ, exception 3. Small Classificatione : 2.3V~3.6V R : 1.8V (1.65V~1.95V)handling code)Q : 1.8V (1.7V~1.95V) t : 2.4V~3.0V(sLC : single Level Cell, MLC : Multi Level Cell)U : 2.7V~3.6V V : 3.3V (3.0V~3.6V)14. Customer Bad Block7 : sLC moviNANDW : 2.7V~5.5V, 3.0V~5.5V 0 : NoNeB : Include Bad Block8 : MLC moviNANDD : Daisychain sampleF : sLC Normal9. ModeL : 1~5 Bad BlockG : MLC Normal0 : NormalN : ini. 0 blk, add. 10 blkH : MLC QDP1 : Dual nCe & Dual R/nBs : All Good BlockK : sLC DDP3 : tri /Ce & tri R/B0 : NoNe (Containing Wafer, CHIP, BIZ, exception L : MLC DDP4 : Quad nCe & single R/nBhandling code)M : MLC DsP5 : Quad nCe & Quad R/nBN : sLC DsP9 : 1st block otP15. Pre-Program VersionP : MLC 8 Die stackA : Mask option 10 : NoneQ : sLC 8 Die stackL : Low gradeserial (1~9, A~Z)s : sLC single sMt : sLC sINGLe (s/B)10. GenerationU : 2 stack MsPM : 1st GenerationW : sLC 4 Die stackA : 2nd Generation4~5. DensityB : 3rd GenerationC : 4th Generation12 : 512M D : 5th Generation56 : 256M1G : 1G11. “ ----”2G : 2G 12. Package4G : 4G 8G : 8GA : CoBAG : 16G BG : B : FBGA (Halogen-Free, Lead-Free)32G CG : 64GC : CHIP BIZ D : 63-tBGADG : 128G F : WsoP (Lead-Free) G : FBGAeG : 256G H : tBGA (Lead-Free)LG : 24GI : ULGA (Lead-Free) (12*17)NG : 96G J : FBGA (Lead-Free)ZG : 48G L : ULGA (Lead-Free) (14*18)00 : NoNeM : tLGA N : tLGA2P : tsoP1 (Lead-Free)6~7. OrganizationQ : tsoP2 (Lead-Free)00 : NoNe s : tsoP1 (Halogen-Free, Lead-Free)08 : x8t : tsoP2 U : CoB (MMC)16 : x16V : WsoP W : WaferY : tsoP1 Z : WeLP (Lead-Free)samsung.com/semi/flash1H 2011Flash Ordering Information15LFHiGH-SPeed ASYncHronouS SrAMDensityOrganizationPart NumberPackageVcc (V)Speed (ns)Operating Operating Standby Production Temp.Current (mA)Current (uA)Status256Kx16K6R4016C1D44-soJ, 44-tsoP2510I65, 5520, 5Mass Production4MbK6R4016V1D44-soJ, 44-tsoP23.310I80, 6520, 5 (1.2)Mass Production512Kx8K6R4008C1D36-soJ, 44-tsoP2510I65, 5520, 5Mass ProductionK6R4008V1D36-soJ, 44-tsoP23.310I80, 6520, 5Mass ProductionSYncHronouS SrAM SPB & SBDensityOrganizationPart PackageOperating Vdd Access Time Cycle TimeI/O Voltage Production CommentsNumberMode(V)tCD (ns)(MHz)(V)Status2Mx18 K7A321830C100-tQFPsPB3.3, 2.53.12003.3, 2.5Mass Production2e1D36MbK7B321835C100-tQFPsB3.3, 2.57.51183.3, 2.5Mass Production1Mx36K7A323630C100-tQFPsPB3.3, 2.53.12003.3, 2.5Mass Production2e1DK7B323635C100-tQFPsB3.3, 2.57.51183.3, 2.5Mass ProductionK7A163630B100-tQFPsPB3.3, 2.52.6, 3.5250, 1673.3, 2.5Mass Production2e1D1Mx36K7A163631B100-tQFPsPB3.3, 2.53.12003.3, 2.5Mass Production2e2D18MbK7B163635B100-tQFPsB3.3, 2.57.51173.3, 2.5Mass Production K7A161830B100-tQFPsPB3.3, 2.52.6, 3.5250, 1673.3, 2.5Mass Production2e1D1Mx18K7A161831B100-tQFPsPB3.3, 2.53.12003.3, 2.5Mass Production2e2DK7B161835B100-tQFPsB3.3, 2.57.51173.3, 2.5Mass Production K7A803609B100-tQFPsPB3.32.62503.3,2.5Not for new designs2e1D256Kx36K7A803600B100-tQFPsPB3.33.51673.3,2.5Not for new designs2e1D8MbK7B803625B100-tQFPsB3.36.51333.3,2.5Not for new designs K7A801809B100-tQFPsPB3.32.62503.3,2.5Not for new designs2e1D512Kx18K7A801800B100-tQFPsPB3.33.51673.3,2.5Not for new designs2e1DK7B801825B100-tQFPsB3.36.51333.3,2.5Not for new designs K7A403609B100-tQFPsPB3.32.42503.3, 2.5Not for new designs2e1D128Kx36K7A403600B100-tQFPsPB3.33.51673.3, 2.5Not for new designs2e1DK7B403625B100-tQFPsB3.36.51333.3, 2.5Not for new designs 4MbK7A403200B100-tQFPsPB3.33.51673.3, 2.5Not for new designs2e1DK7A401809B100-tQFPsPB3.32.42503.3, 2.5Not for new designs2e1D256Kx18K7A401800B100-tQFPsPB3.33.51673.3, 2.5Not for new designs2e1DK7B401825B100-tQFPsB3.36.51333.3, 2.5Not for new designs Notes:All tQFP products are Lead FreesPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz2e1D = 2-cycle enable and 1-cycle DisablesB speed recommendation: Use 7.5ns Access time; Use 6.5ns Access time
2e2D = 2-cycle enable and 2-cycle Disable
16Asynchronous & Synchronous SDRAM1H 2011samsung.com/semi/sramntrAMTypeDensityOrganizationPart NumberPackageOperating Vdd (V)Access Time Speed I/O Voltage Production StatusModetCD (ns)tCYC (MHz)(V)72Mb2Mx36K7N643645M100-tQFPsPB2.52.6, 3.5250, 1672.5Mass Production4Mx18K7N641845M100-tQFPsPB2.52.6, 3.5250, 1672.5Mass Production1Mx36K7N323631C100-tQFP, 165FBGAsPB3.3, 2.52.6, 3.5250, 1673.3, 2.5Mass Production36Mb2Mx18K7N321831C100-tQFP, 165FBGAsPB3.3, 2.52.6, 3.5250, 1673.3, 2.5Mass Production1Mx36K7M323635C100-tQFPFt3.3, 2.57.51183.3, 2.5Mass Production2Mx18K7M321835C100-tQFPFt3.3, 2.57.51183.3, 2.5Mass Production1Mx18K7N161831B100-tQFP, 165FBGAsPB3.3, 2.52.6, 3.5250, 1673.3, 2.5Mass Production18Mb512Kx36K7N163631B100-tQFP, 165FBGAsPB3.3, 2.52.6, 3.5250, 1673.3, 2.5Mass Production1Mx18K7M161835B100-tQFPFt (sB)3.36.51333.3, 2.5Mass Production512Kx36K7M163635B100-tQFPFt (sB)3.36.51333.3, 2.5Mass ProductionNtRAM256Kx36K7N803601B100-tQFPsPB3.33.51673.3,2.5Not for new designs512Kx18K7N801801B100-tQFPsPB3.33.51673.3,2.5Not for new designs256Kx36K7N803609B100-tQFPsPB3.32.62503.3,2.5Not for new designs512Kx18K7N801809B100-tQFPsPB3.32.62503.3,2.5Not for new designs8Mb256Kx36K7N803645B100-tQFPsPB2.53.51672.5Not for new designs512Kx18K7N801845B100-tQFPsPB2.53.51672.5Not for new designs256Kx36K7N803649B100-tQFPsPB2.52.62502.5Not for new designs512Kx18K7N801849B100-tQFPsPB2.52.62502.5Not for new designs512Kx18K7M801825B100-tQFPFt3.36.51333.3, 2.5Not for new designs256Kx36K7M803625B100-tQFPFt3.36.51333.3, 2.5Not for new designs4Mb128Kx36K7N403609B100-tQFPsPB3.332003.3,2.5Not for new designs256Kx18K7N401809B100-tQFPsPB3.332003.3,2.5Not for new designssPB and Ft4Mb256Kx18K7B401825B100-tQFPsB3.36.51333.3, 2.5Not for new designsNotes:All tQFP products are lead freeNtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHzNtRAM speed recommendation: Use 7.5ns Access time use 6.5ns Access time
Recommended sPB speeds are 250MHz and 167MHz Recommended sB Acess speed is 7.5ns
late-Write rr SrAMDensityOrganizationPart NumberPackageOperating Vdd (V)Access Time Speed tCYC I/O Voltage Production StatusModetCD (ns)(MHz)(V)32Mb1Mx36K7P323674C119-BGAsP1.8 / 2.5V1.6, 2.0300,2501.5 (Max 1.8)Mass Production2Mx18K7P321874C119-BGAsP1.8 / 2.5V1.6, 2.0300,2501.5 (Max 1.8)Mass Production256Kx36K7P803611B119-BGAsP3.31.63001.5 (Max.2.0)Mass Production8Mb512Kx18K7P801811B119-BGAsP3.31.63001.5 (Max.2.0)Mass Production256Kx36K7P803666B119-BGAsP2.522501.5 (Max.2.0)Mass Production512Kx18K7P801866B119-BGAsP2.522501.5 (Max.2.0)Mass Productionsamsung.com/semi/sram1H 2011NtRAM & Late Write RR SRAM17MARSddr SYncHronouS SrAMTypeDensityOrganizationPart NumberPackageVdd (V)Access Time Cycle Time I/O Voltage Production CommentstCD (ns)(V)Status16Mb512Kx36K7D163674B153-BGA1.8~2.52.3330, 3001.5~1.9Mass ProductionDDR1Mx18K7D161874B153-BGA1.8~2.52.3330, 3001.5~1.9Mass Production8Mb256Kx36K7D803671B153-BGA2.51.7/1.9/2.1333, 330, 2501.5 (Max 2.0)Not for new designs512Kx18K7D801871B153-BGA2.51.7/1.9/2.1333, 330, 2501.5 (Max 2.0)Not for new designsK7I641882M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionCIo-2B4Mx18K7I641884M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionCIo-4B72MbK7J641882M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionsIo-2BK7I643682M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionCIo-2B2Mx36K7I643684M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionCIo-4BK7J643682M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionsIo-2BK7I321882C165-FBGA1.80.45300,2501.5,1.8Mass ProductionCIo-2B2Mx18K7I321884C165-FBGA1.80.45300,2501.5,1.8Mass ProductionCIo-4BDDR II 165-FBGA1.80.45300,2501.5,1.8Mass ProductionsIo-2BCIo/sIo36MbK7J321882CK7I323682C165-FBGA1.80.45300,2501.5,1.8Mass ProductionCIo-2B1Mx36K7I323684C165-FBGA1.80.45300,2501.5,1.8Mass ProductionCIo-4BK7J323682C165-FBGA1.80.45300,2501.5,1.8Mass ProductionsIo-2BK7I161882B165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionCIo-2B1Mx18K7I161884B165-FBGA1.80.45,0.45,0.45,0.50250,200,1671.5,1.8Mass ProductionCIo-4B18MbK7J161882B165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionsIo-2BK7J163682B165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionsIo-2B512Kx36K7I163682B165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionCIo-2BK7I163684B165-FBGA1.80.45,0.45,0.45,0.50250,200,1671.5,1.8Mass ProductionCIo-4BK7K3218t2C165-FBGA1.80.454001.5Mass ProductionDDRII + CIo-2B, 2 clocks latancy2Mx18K7K3218U2C165-FBGA1.80.454002.5Mass ProductionDDRII + CIo-2B, 2.5 clocks latancy36MbK7K3236t2C165-FBGA1.80.45400, 3331.5Mass ProductionDDRII + CIo-2B, 2 clocks latancy1Mx36DDR II+ CIoK7K3236U2C165-FBGA1.80.45400, 3342.5Mass ProductionDDRII + CIo-2B, 2.5clocks latancyK7K1618t2C165-FBGA1.80.45400, 3331.5Mass ProductionDDRII + CIo-2B, 2 clocks latancy1Mx1818MbK7K1618U2C165-FBGA1.80.45400, 3342.5Mass ProductionDDRII + CIo-2B, 2.5clocks latancy512Kx36K7K1636t2C165-FBGA1.80.45400, 3331.5Mass ProductionDDRII + CIo-2B, 2 clocks latancyNotes:2B = Burst of 2For DDR II CIo/sIo: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit4B = Burst of 4For DDR II+ CIo: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
sIo = separate I/oCIo = Common I/o
18DDR I / II / II+1H 2011samsung.com/semi/sramQdr SYncHronouS SrAMTypeDensityOrganizationPart PackageVdd Access Time Cycle Time I/O Voltage Production CommentsNumber(V)tCD (ns)(V)Status1Mx18K7Q161862B165-FBGA1.8v / 2.5v2.51671.5,1.8Mass ProductionQDR I - 2BQDR I18MbK7Q161864B165-FBGA1.8v / 2.5v2.51671.5,1.8Mass ProductionQDR I - 4B512Kx36K7Q163662B165-FBGA1.8v / 2.5v2.51671.5,1.8Mass ProductionQDR I - 2BK7Q163664B165-FBGA1.8v / 2.5v2.51671.5,1.8Mass ProductionQDR I - 4B 8Mx9K7R640982M165-FBGA1.80.45,0.45,0.50250,200,1671.5,1.8Mass ProductionQDR II-2BK7R641882M165-FBGA1.80.45,0.45,0.50250,200,1671.5,1.8Mass ProductionQDR II-2B72Mb4Mx18K7R641884M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionQDR II-4B2Mx36K7R643682M165-FBGA1.80.45,0.45,0.50250,200,1671.5,1.8Mass ProductionQDR II-2BK7R643684M165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionQDR II-4B4Mx9K7R320982C165-FBGA1.80.45167, 250, 2001.5,1.8Mass ProductionQDR II-2BK7R321882C165-FBGA1.80.45167, 250, 2001.5,1.8Mass ProductionQDR II-2BQDR II36Mb2Mx18K7R321884C165-FBGA1.80.45200, 300, 2501.5,1.8Mass ProductionQDR II-4B1Mx36K7R323682C165-FBGA1.80.45300, 250, 2001.5,1.8Mass ProductionQDR II-2BK7R323684C165-FBGA1.80.45200, 300, 2501.5,1.8Mass ProductionQDR II-4B2Mx9K7R160982B165-FBGA1.80.45,0.45,0.50250,200,1671.5,1.8Mass ProductionQDR II - 2BK7R161882B165-FBGA1.80.45,0.45,0.50250,200,1671.5,1.8Mass ProductionQDR II - 2B18Mb1Mx18K7R161884B165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionQDR II - 4B512Kx36K7R163682B165-FBGA1.80.45,0.45,0.50250,200,1671.5,1.8Mass ProductionQDR II - 2BK7R163684B165-FBGA1.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8Mass ProductionQDR II - 4BK7s3236t4C165-FBGA1.80.454001.5Mass ProductionQDR II + 4B, 2 clocks latancy1Mx36K7s3236U4C165-FBGA1.80.454002.5Mass ProductionQDR II + 4B, 2.5 clocks latancy36MbK7s3218t4C165-FBGA1.80.454001.5Mass ProductionQDR II + 4B, 2 clocks latancyQDR II+2Mx18K7s3218U4C165-FBGA1.80.454001.5Mass ProductionQDR II + 4B, 2.5 clocks latancy1Mx18K7s1618t4C165-FBGA1.80.45400, 3331.5Mass ProductionQDR II + 4B, 2 clocks latancy18Mb512Kx36K7s1636U4C165-FBGA1.80.45400, 3331.5Mass ProductionQDR II + 4B, 2.5 clocks latancyNotes:For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit
For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommendedFor QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed
samsung.com/semi/sram1H 2011QDR I / II / II+19MARSSYncHronouS SrAM orderinG inForMAtion1 2 3 4 5 6 7 8 910 111213141516K 7 XXX X X X X X -XXXXXSAMSUNG MemoryPackaging TypeSync SRAMSpeedSmall ClassificationSpeedDensityTemp, PowerDensityPackageOrganization---OrganizationGenerationVcc, Interface, ModeVcc, Interface, Mode1. Memory (K)49: 2.5V,LVttL,Hi sPeeDWAFER, CHIP BIZ Level Division52: 2.5V,1.5/1.8V,HstL,Burst20: NoNe,NoNe2. Sync SRAM: 754: 2.5V,1.5/1.8V,HstL,Burst41: Hot DC sort3. Small Classification62: 2.5V/1.8V,HstL,Burst22: Hot DC, selected AC sort64: 2.5V/1.8V,HstL,Burst4A: sync Pipelined Burst66: 2.5V,HstL,R-R14~15. SpeedB: sync Burst74: 1.8V,2.5V,HstL,AllSync Burst,Sync Burst + NtRAMD: Double Data Rate82: 1.8V,HstL,Burst2< Mode is R-L > (Clock Accesss time)I: Double Data Rate II, Common I/o84: 1.8V,HstL,Burst465: 6.5ns 70: 7nsJ: Double Data Rate, separate I/o88: 1.8V,HstL,R-R75: 7.5ns 80: 8nsK: Double Data II+, Common I/ot2: 1.8V,2Clock Latency,Burst285: 8.5nsM: sync Burst + NtRAMt4: 1.8V,2Clock Latency,Burst4N: sync Pipelined Burst + NtRAMU2: 1.8V,2.5Clock Latency,Burst2Other Small Classification (Clock Cycle Time)P: sync PipeU4: 1.8V,2.5Clock Latency,Burst410: 100MHz 11: 117MHzQ: Quad Data Rate I13: 133MHz 14: 138MHzR: Quad Data Rate II 10. Generation16: 166MHz 20: 200MHzs: Quad Data Rate II+ M: 1st Generation25: 250MHz26: 250MHz(1.75ns) 27: 275MHz4~5. DensityA: 2nd GenerationB: 3rd Generation30: 300MHz 33: 333MHz80: 8M 16: 18MC: 4th Generation35: 350MHz 37: 375MHz40: 4M 32: 36MD: 5th Generation40: 400MHz(t-CYCLe) 42: 425MHz64: 72M 11. “--”45: 450MHz 50: 500MHz (except sync Pipe)6~7. Organization08: x8 09: x912. Package16. Packing Type (16 digit)18: x18 32: x32H: BGA,FCBGA,PBGA - Common to all products, except of Mask RoM36: x36 G: BGA, FCBGA, FBGA (LF) - Divided into tAPe & ReeL (In Mask RoM, F: FBGA divided into tRAY, AMMo packing separately)8~9. Vcc, Interface, Modee: FBGA (LF)Type Packing Type New Marking 00: 3.3V,LVttL,2e1D WIDeQ: (L)QPFComponent tAPe & ReeL t 01: 3.3V,LVttL,2e2D WIDeP: (L)QFP(LF) other (tray, tube, Jar) 0 (Number) 08: 3.3V,LVttL,2e2D Hi sPeeDC: CHIP BIZ stack s09: 3.3V,LVttL,Hi sPeeDW: WAFeRComponent tRAY Y 11: 3.3V,HstL,R-R(Mask RoM) AMMo PACKING A 12: 3.3V,HstL,R-L13. Temp, PowerModule MoDULe tAPe & ReeL P 14: 3.3V,HstL,R-R Fixed ZQCOMMON (Temp,Power) MoDULe other Packing M 22: 3.3V,LVttL,R-R0: NoNe,NoNe (Containing of error 23: 3.3V,LVttL,R-Lhandling code)25: 3.3V,LVttL,sB-Ft WIDeC: Commercial,Normal 30: 1.8/2.5/3.3V,LVttL,2e1De: extended,Normal 31: 1.8/2.5/3.3V,LVttL,2e2DI: Industrial,Normal 35: 1.8/2.5/3.3V,LVttL,sB-Ft44: 2.5V,LVttL,2e1D45: 2.5V,LVttL,2e2D20SRAM Ordering Information1H 2011samsung.com/semi/sramMcP: nAnd + MddrMemoryNAND DensityDRAM Density/OrganizationVoltage (NAND-DRAM)Package1Gb (x16)256/512Mb (x16)1.8V - 1.8V130/137FBGA512Mb (x32)1.8V - 1.8V137FBGA2Gb (x16)1Gb (x16,x32)1.8V - 1.8V130/137FBGANAND & MDRAM2Gb (x32)1.8V - 1.8V137FBGA4Gb (x16)2Gb*2 (x32, 2Cs/2CKe)1.8V - 1.8V137FBGA2Gb*2 (x32)1.8V - 1.8V240FBGA PoP4Gb*2 (x16)2Gb*2 (x32, 2Cs/2CKe)1.8V - 1.8V137FBGA8Gb (x16)2Gb*2 (x32)1.8V - 1.8V240FGBA PoPMcP: movinAnd + lPddr2MemorymoviNAND DensityDRAM Density/OrganizationVoltagePackage4GB2Gb*2 (x32, 1ch, 2Cs)1.8V - 1.8V186FBGA/162FBGA4Gb*2 (x32, 1ch, 2Cs)1.8V - 1.8V186FBGA/162FBGAmoviNAND & MDRAM8GB2Gb*2 (x32, 1ch, 2Cs)1.8V - 1.8V186FBGA16GB2Gb*2 (x32, 1ch, 2Cs)1.8V - 1.8V186FBGA4Gb*2 (x32, 1ch, 2Cs)1.8V - 1.8V186FBGAMcP: nor + utrAMMemoryNOR DensityUtRAM Density/OrganizationVoltage MCP Package 512Mb (Mux)256Mb1.8V - 1.8V56FBGA512Mb (Demux)128Mb1.8V - 1.8V84FBGA256Mb (Mux)128Mb1.8V - 1.8V56FBGANOR & UtRAM256Mb (Mux)64Mb1.8V - 1.8V56FBGA256Mb (Demux)64Mb1.8V - 1.8V56FBGA128Mb (Mux)64Mb1.8V - 1.8V52FBGA128Mb (Demux)64Mb1.8V - 1.8V84FBGAsamsung.com/semi/mcp1H 2011Multi-Chip Packages21PCM3.5\" HArd diSK driVeS FamilyCapacity (GB)RPMInterfaceBufferSectorModel1607200sAtA 3.0 Gbps8512HD165GJ1607200sAtA 3.1 Gbps16512HD166GJF42507200sAtA 3.2 Gbps8512HD255GJ2507200sAtA 3.3 Gbps16512HD256GJ3207200sAtA 3.4 Gbps16512HD322GJF4eG-315005400sAtA 3.5 Gbps324KHD155UI20005400sAtA 3.6 Gbps324KHD204UI1607200sAtA 3.0 Gbps8512HD164GJ2507200sAtA 3.0 Gbps8512HD254GJ3207200sAtA 3.0 Gbps8512HD324HJF31607200sAtA 3.0 Gbps16512HD163GJ2507200sAtA 3.0 Gbps16512HD253GJ3207200sAtA 3.0 Gbps16512HD323HJ5007200sAtA 3.0 Gbps16512HD502HJ1tB7200sAtA 3.0 Gbps32512HD103sJ2505400sAtA 3.0 Gbps16512HD253GIecoGreen F35005400sAtA 3.0 Gbps16512HD503HI1 tB5400sAtA 3.0 Gbps32512HD105sI5005400sAtA 3.0 Gbps16512HD502HIecoGreen F2 (F2eG)1 tB5400sAtA 3.0 Gbps32512HD103sI1.5 tB5400sAtA 3.0 Gbps32512HD154UIF1Dt1607200sAtA 3.0 Gbps8512HD161GJ2507200sAtA 3.0 Gbps8512HD251HJ3207200sAtA 3.0 Gbps8512HD321HJ3207200sAtA 3.0 Gbps16512HD322HJ1 tB7200sAtA 3.0 Gbps32512HD103UJ750-sAtA 3.0 Gbps32512HD754JIF3eG1tB-sAtA 3.0 Gbps32512HD105sI1.5 tB-sAtA 3.0 Gbps32512HD153WI2 tB-sAtA 3.0 Gbps32512HD203WI22Hard Disk Drives1H 2011samsung.com/hdd2.5\" HArd diSK driVeSFamilyCapacity (GB)RPMInterfaceBufferSectorModel1605400UsB 2.08512HM162HXM7U2505400UsB 2.08512HM252HX3205400UsB 2.08512HM322IX5005400UsB 2.08512HM502JX1605400sAtA 3.0 Gbps8512HM161GI2505400sAtA 3.0 Gbps8512HM251HIM7e3205400sAtA 3.0 Gbps8512HM321HI5005400sAtA 3.0 Gbps8512 HM501II6405400sAtA 3.0 Gbps8512HM641JI1605400sAtA 3.0 Gbps8512HM161HI2505400sAtA 3.0 Gbps8512HM250HIM73205400sAtA 3.0 Gbps8512HM320II4005400sAtA 3.0 Gbps8512HM400JI5005400sAtA 3.0 Gbps8512HM500JIMt275054008HM750LI100054008HM100UI250720016HM250HJMP4320720016HM320HJ500720016HM500JJ640720016HM640JJM5P1605400PAtA8512HM160HCM5s1605400sAtA 1.5 Gbps8512HM160HIMC30305400PAtA8512HM031HCSolid StAte driVeS (SSd) Interface Size Connector Controller ComponentDensityPart Number2.5\" 64GBMZ7PA064HMCD-010007mmtthin sAtAPM81016Gb128GBMZ7PA128HMCD-01000256GBMZ7PA256HMDR-010002.5\"64GBMZ5PA064HMCD-01000sAtA II - MLC9.5mmt thin sAtAPM81016Gb128GBMZ5PA128HMCD-01000256GBMZ5PA256HMDR-0100032GBMZMPA032HMCD-00000msAtAPClePM81016Gb64GBMZMPA064HMDR-00000128GBMZMPA128HMFU-00000Please contact your local samsung sales representative for latest product offeringsNote: All parts are lead freesamsung.com/hdd | samsung.com/greenmemory1H 2011Hard Disk Drives & Solid State Drives23EGAROTSBlu-rAY H/HInterfaceSpeedTypeLoadingLightscribeModelsAtABD Combo 12XH/HtrayXts-HB43A / sH-B123Aots-HB43L / sH-B123LBlu-rAY SliMInterfaceSpeedTypeLoadingLightscribeModelsAtABD Combo 4XslimtrayXsN-B043DosN-B043PBlu-rAY coMBo SliM externAlInterfaceSpeedTypeLoadingLightscribeModelUsB 2.0BD Combo 6X slimtrayXse-406ABdVd-W H/HInterfaceSpeedTypeLoadingLightscribeModelPAtADVD Write 22XH/HtrayXts-H662A / sH-s222AsAtADVD Write 22XH/HtrayXts-H663C / sH-s223CPAtADVD Write 22XH/Htrayots-H662L / sH-s222LsAtADVD Write 22XH/Htrayots-H663L / sH-s223LsAtADVD Write 22XH/HtrayXsH-222ABdVd-W SlimInterfaceSpeedTypeLoadingLightscribeModelts-L633F / sN-s083FsAtADVD Write 8XslimtrayXts-L633Jots-L633R / sN-s083Rslotots-t633PdVd-W SliM externAlInterfaceSpeedTypeLoadingLightscribeModelUsB 2.0DVD Write 8XUltra slimtrayXse-s084DslimtrayXse-s084FdVd-roMInterfaceSpeedTypeLoadingLightscribeModelsAtADVD 16XH/HtrayXsH-D163CDVD 8Xslimts-L333HdVd-W loAderInterfaceSpeedTypeLoadingLightscribeModelPAtADVD 8XH/HtrayXts-P632F24Optical Disk Drives1H 2011samsungodd.comWhy DID Instead of TV?Product Segmentation TypeAbbrCommercial (DID)WarrantyBezelWarrantyE-DIDExclusive18 months to 2 years90 days to 1 yearNarrow and Outdoor, Video Walls, 2 years20 hours +450 to 2000 nitsHeavyHigh-price RangeSuper NarrowPanormaicDesigned for in-home use in controlled environmentDesigned for continuous use in different environmentsReliability P-DIDPerformanceTurned on for 20 hours +2 yearsNarrow20 hours +600/700 nitsMediumTurned on for 6-8 hoursSemi-OutdoorMid-price RangeIn-home living roomVariety of temperatures & locationoutdoor: HiGH luMinAnceB-DIDBasic18 monthsNormal14-16 hours450 nitsLightIndoor, e-BoardLow-price Range; Comperable to Consumer PanelsSuPer nArroWPAnorAMic diSPlAYe-did: exclusive did» 1500 – 2000nitDesigned for vable TV signalsDesigned for PC signalsPicture QualityHave cooler color temperature settings producing blue/white image LCD backlight covers a wider color spectrum necessary for PC source WAll-MountednArroWlArGe ForMAt diSPlAYdisplaying less color accuracyintegration giving better picture quality» narrow» thin/lightP-did: Performance didSuggested Run TimeBrightnessUsageConsumer (TV)ApplicationsPricingDID Product ClassificationLocationCan be oriented in either portrait or landscape mode» Black Bezel» (edge led)» 70” / 82”Can only be oriented in portrait modeB-did: Basic didlAndScAPe / PortrAit conVertiBleProduct Segmentation
HEAVY USE
e-did: exclusive
» All Features of P-did
» Specialty: SnB, Panoramic, High Brightness» robust design
Professional• Control Room• simulationoutdoor events• scoreboard• sports Billboard• Billboard BroadcastingP-did: Performance
» All Features of B-did» narrow & Black Bezel
» typ. Brightness: 700 (cd/m2)
entertainment• Casino• theatre • Poster• Menutransportation• Airport• train/Bus stationcommunication• Conference Roomrental• Rental• stagingB-did: Basic
» landscape/Portrait» High reliability » Pol. (Haze 44%)
» long lifetime: More than 2 Years
LIGHT USE
commercial• Kiosk• Mart Board
education• e-Boardtftlcd.com1H 2011LCD25LCDSAMSunG diGitAl inForMAtion diSPlAY (did) PAnel lineuPTypeCurrent Model Contrast Response ModelNew ModelSizeresolutionBezelBacklightBrightness (typical)RatioTimeFrequencyMP*CommentLtI430LA01-0-43\"1920X480NarrowCCFL700 nits3,000:18ms60HzNowPanoramicLtI430LA0243\"1920X480Narrowe-LeD450 nits3,000:16ms60Hz2011. Q2PanoramicLtI460AA03-46\"HDNarrow + BlackCCFL1500 nits3,000:18ms60HzNowHigh brightLtI460AA04-46\"HDsuper e-DIDnarrowCCFL700 nits3,000:18ms60HzNow7.3mm Active to ActiveLtI460AA05-46\"HDsuper narrowCCFL450 nits4,000:18ms60HzNow7.3mm Active to ActiveLtI550HN0155\"FHDsuper narrowD-LeD700 nits3,000:1tBD60Hz2011. Q25.7mm Active to ActiveLtI700HD0270\"FHDNormalD-LeD2000 nits2,500:18ms60HzNowHigh BrightLtI400HA0240\"FHDNarrowCCFL700 nits3,000:18ms60HzNowLtI400HA0340\"FHDNarrow + BlackCCFL700 nits3,000:18ms60HzNowLtI460HA0246\"FHDNarrowCCFL700 nits3,500:18ms60HzNowLtI460HA0346\"FHDNarrow + 700 nits3,500:18ms60HzNowP-DIDBlackCCFLLtI460HJ0146\"FHDNarrowe-LeD600 nits3,000:110ms120Hz2011. Q2LtI550HF02-55\"FHDNarrowCCFL700 nits4,000:18ms60HzNowLtI550HJ0255\"FHDNarrowe-LeD600 nits4,000:110ms120Hz2011. Q2LtI700HD01-70\"FHDNormalCCFL600 nits2,000:18ms60HzNowLtI820Ht-L01-82\"FHDNormalCCFL600 nits2,000:18ms60HzNowLtI260AP0126\"HDNormalCCFL450 nits4,000:18ms60HzNowLtI320AA02LtI320AP0232\"HDNormalCCFL450 nits3,500:18ms60Hz2011. Q2LtI400HA0140\"FHDNormalCCFL450 nits4,000:18ms60HzNowB-DIDLtI460HM0146\"FHDNormalCCFL450 nits3,000:18ms60HzNowLtI700HD0370\"FHDNormalCCFL450 nits2,000:18ms60HzNowe-Board; Landscape mode onlyLtI820HD0382\"FHDNormalCCFL450 nits2,000:18ms60HzNowe-Board; Landscape mode onlyNotes:HD = 1366 x 768 FHD = 1920 x 1080
*MP Date subject to change
Please contact your local samsung Rep for more information.
26LCD1H 2011tftlcd.comtABletSSizePNModeResolutionH(RGB)VAspect RatioPPIBrightness (nits)MP7LtN070NL01PLsWsVGA102460017:10170400NowPLsWXGA128080016:10216400June, 20119.7LtN097LX01-H01PLsXGA10247684:3132300April, 201110.1LtN101AL02-P01PLs WXGA128080016:10149400April, 2011PLsWXGA128080016:10149400June, 2011noteBooKS / PerSonAl coMPuterSSizePNModeResolutionH(RGB)VAspect RatioPPIBrightness (nits)MP10.1LtN101Nt06tNWsVGA102460017:10118200NowLtN101At03tNHD136676816:9155200tBD11.6LtN116AttNHD136676816:9135200tBD12.5LtN125AttNHD136676816:9125200tBD13.3LtN133AttNHD136676816:9118200tBD14LtN140AttNHD136676816:9112200NowLtN140KttNHD+160090016:9131250tBDLtN156AttNHD136676816:9100200Now15.6LtN156KttNHD+160090016:9118250tBDLtN156HttNFHD1920108016:9141300tBD17.3LtN173Kt01tNHD+160090016:9106200NowMonitorSSizePNModeResolutionH(RGB)VAspect RatioPPIBrightness (nits)MP17LtM170et01tNsXGA128010245:496250Now18.5LtM185At01tNHD136676816:985250NowLtM185At04tNHD136676816:985250Now20LtM200Kt03tNHD+160090016:992250NowLtM200Kt07tNHD+160090016:992250Now22LtM220Mt05tNWsXGA+1680105016:1090250NowLtM230HP01PVAFHD1920108016:996300Now23LtM230Ht01tNFHD1920108016:996300NowLtM230Ht05tNFHD1920108016:996300Now24LtM240Ct04tNWUXGA1920120016:1094300NowLtM240CL01PLsWUXGA1920120016:994300May, 201127LtM270Ht03tNFHD1920108016:982300NowLtM270DL02PLsQHD2560144016:9109300May, 2011tftlcd.com1H 2011Tablets / Notebooks / Personal Computers / Monitors27DCLMeMorY
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StorAGe
Solid State Drives Hard Drives
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samsung.com/us/business/oem-solutions
Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713
BR-11-ALL-001 Printed 03/11
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