专利名称：Techniques for forming optoelectronic
devices
发明人：Francois J. Henley,Sien Kang,Albert Lamm申请号：US14156282申请日：20140115公开号：US10041187B2公开日：20180807
专利附图：
摘要：Embodiments relate to use of a particle accelerator beam to form thin films ofmaterial from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donorsubstrate) having a top surface is exposed to a beam of accelerated particles. In certain
embodiments, this bulk substrate may comprise GaN; in other embodiments this bulksubstrate may comprise Si, SiC, or other materials. Then, a thin film or wafer of material isseparated from the bulk substrate by performing a controlled cleaving process along acleave region formed by particles implanted from the beam. In certain embodiments thisseparated material is incorporated directly into an optoelectronic device, for example aGaN film cleaved from GaN bulk material. In some embodiments, this separated materialmay be employed as a template for further growth of semiconductor materials (e.g. GaN)that are useful for optoelectronic devices.
申请人：QMAT, Inc.
地址：San Jose CA US
国籍：US
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