SMD Diodes SpecialistCDBF70(RoHs Device)
Io = 70 mAVR = 70 VoltsFeatures
Low forward Voltage.
Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
0.051(1.30)0.043(1.10)1005(2512)0.102(2.60)0.095(2.40)Mechanical data
Case: 1005(2512) standard package, molded plastic.
Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.).
0.040(1.00) Typ.0.012 (0.30) Typ.0.020(0.50) Typ.0.035(0.90)0.027(0.70)Dimensions in inches and (millimeter)Maximum Rating (at TA=25C unless otherwise noted)
O
Parameter
Peak reverse voltageReverse voltageRMS reverse voltage
Average forward rectified currentForward current,surge peakPower dissipationStorage temperatureJunction temperature
Conditions
SymbolMinTypMaxUnit
VRMVRVR(RMS)
IO
707049700.1200
-65
+125+125
VVVmAAmW
O
8.3 ms single half sine-wave superimposedon rate load(JEDEC method)
IFSMPDTSTGTj
CC
O
Electrical Characteristics (at TA=25C unless otherwise noted)
O
Parameter
Forward voltageReverse current
Capacitance between terminalsReverse recovery time
IF = 1mAIF = 15mAVR = 50V
Conditions
SymbolMinTypMaxUnit
VFIRCTTrr
0.4110.125
VuApFnS
f = 1 MHz, and 0 VDC reverse voltageIF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
REV:B
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SMD Schottky Barrier Diode
SMD Diodes SpecialistRATING AND CHARACTERISTIC CURVES (CDBF70)
Fig. 1 - Forward characteristics
100COFig. 2 - Reverse characteristics
100u12575OC25COForward current (mA )Reverse current ( A )0CO-40CO10u125CO 101u75CO100n25CO 110n0CO1n-40CO0.100.20.40.60.81.01.21.41.60.1n010203040506070Forward voltage (V) Reverse voltage (V)
Fig.3 - Capacitance between terminals characteristics
Capacitance between terminals (PF)2.01.81.61.41.21.00.80.60.40.200
5
10
15
20
25
30
35
40
Fig.4 - Current derating curve
120Mounting on glass epoxy PCBs
Average forward current(%)f=1MHzOTA=25C1008060402000255075100O
125150Reverse voltage (V)Ambient temperature (C)
REV:B
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分销商库存信息:
COMCHIPCDBF70
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