专利名称：METHOD OF MANUFACTURING DEVICE发明人：Kazuhiro NOJIMA申请号：US13553392申请日：20120719
公开号：US20130023095A1公开日：20130124
专利附图：
摘要：A semiconductor pillar which has a first conductive type and protrudes from asemiconductor substrate, is formed. A bottom diffusion layer having a second conductivetype is formed in the semiconductor substrate around a bottom of the semiconductorpillar. A gate insulator film which covers a side surface of the semiconductor pillar, is
formed. A gate electrode which covers the gate insulator film, is formed. A top diffusionlayer having the second conductive type is formed at a top portion of the semiconductorpillar. The top diffusion layer including a semiconductor body is formed by an epitaxialgrowth which contains an impurity.
申请人：Kazuhiro NOJIMA
地址：Chuo-ku JP
国籍：JP
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