P6SMB11CAT3 Series
600 Watt Peak Power ZenerTransient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitivecomponents from high voltage, high energy transients. They haveexcellent clamping capability, high surge capability, low zenerimpedance and fast response time. The SMB series is supplied inON Semiconductor’s exclusive, cost-effective, highly reliableSurmetict package and is ideally suited for use in communicationsystems, automotive, numerical controls, process controls, medicalequipment, business machines, power supplies and many otherindustrial/consumer applications.
Features
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Working Peak Reverse Voltage Range − 9.4 to 77.8 VStandard Zener Breakdown Voltage Range − 11 to 91 VPeak Power − 600 W @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body ModelMaximum Clamp Voltage @ Peak Pulse CurrentLow Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit ProtectionResponse Time is Typically < 1 nsPb−Free Packages are Available
PLASTIC SURFACE MOUNTZENER OVERVOLTAGETRANSIENT SUPPRESSORS9.4−78 VOLTS600 WATT PEAK POWERSMBCASE 403APLASTICMechanical Characteristics:
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic
FINISH: All External Surfaces are Corrosion Resistant and Leads are
MARKING DIAGRAMReadily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend Providing More Contact Area to Bond PadsPOLARITY: Polarity Band Will Not be IndicatedMOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ TL = 25°C,Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°CMeasured Zero Lead Length (Note 2)Derate Above 75°C
Thermal Resistance, Junction−to−LeadDC Power Dissipation (Note 3) @ TA = 25°CDerate Above 25°C
Thermal Resistance, Junction−to−AmbientOperating and Storage Temperature Range
SymbolPPKPDRqJLPDRqJATJ, Tstg
Value6003.040250.554.4226−65 to+150
UnitWWmW/°C°C/WWmW/°C°C/W°C
AYWWxxCGGxxC= Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)ORDERING INFORMATION
DeviceP6SMBxxCAT3P6SMBxxCAT3G
PackageSMBSMB(Pb−Free)
Shipping†2500/Tape & Reel2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1.10 X 1000 ms, non−repetitive
2.1″ square copper pad, FR−4 board
3.FR−4 board, using ON Semiconductor minimum recommended footprint, asshown in 403A case outline dimensions spec.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.
© Semiconductor Components Industries, LLC, 2006
The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommendedchoices for future use and best overall value.
1
July, 2006 − Rev. 8
Publication Order Number:
P6SMB11CAT3/D
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P6SMB11CAT3 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)SymbolIPPVCVRWMIRVBRITQVBR
Parameter
Maximum Reverse Peak Pulse CurrentClamping Voltage @ IPPWorking Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWMBreakdown Voltage @ ITTest Current
Maximum Temperature Coefficient of VBR
IPPITVCVBRVRWMIRIRVRWMVBRVCITIPPIVBi−Directional TVSELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VRWM
(Note 4)Volts9.410.211.112.813.615.317.118.820.523.125.628.230.833.336.840.243.647.85358.164.170.177.8
IR @VRWMmA55555555555555555555555
Breakdown VoltageVBR Volts (Note 5)Min10.511.412.414.315.217.11920.922.825.728.531.434.237.140.944.748.553.258.964.671.377.986.5
Nom11.051213.0515.05161820222427.053033.053639.0543.0547.0551.0556626875.058291
Max11.612.613.715.816.818.92123.125.228.431.534.737.84145.249.453.658.865.171.478.886.195.5
@ ITmA11111111111111111111111
VC @ IPP (Note 6)VCVolts15.616.718.221.222.525.227.730.633.237.541.445.749.953.959.364.870.1778592103113125
IPPAmps3836332827242220181614.413.21211.210.19.38.67.87.16.55.85.34.8
QVBR%/°C0.0750.0780.0810.0840.0860.0880.090.090.0940.0960.0970.0980.0990.10.1010.1010.1020.1030.1040.1040.1050.1050.106
Ctyp(Note 7)pF865800740645610545490450415370335305280260240220205185170155140130120
Device*P6SMB11CAT3, GP6SMB12CAT3, GP6SMB13CAT3, GP6SMB15CAT3, GP6SMB16CAT3, GP6SMB18CAT3, GP6SMB20CAT3, GP6SMB22CAT3, GP6SMB24CAT3, GP6SMB27CAT3, GP6SMB30CAT3, GP6SMB33CAT3, GP6SMB36CAT3, GP6SMB39CAT3, GP6SMB43CAT3, GP6SMB47CAT3, GP6SMB51CAT3, GP6SMB56CAT3, GP6SMB62CAT3, GP6SMB68CAT3, GP6SMB75CAT3, GP6SMB82CAT3, GP6SMB91CAT3, G
DeviceMarking11C12C13C15C16C18C20C22C24C27C30C33C36C39C43C47C51C56C62C68C75C82C91C
4.A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater thanthe DC or continuous peak operating voltage level.
5.VBR measured at pulse test current IT at an ambient temperature of 25°C.
6.Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.7.Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C
*The “G’’ suffix indicates Pb−Free package available. Please refer back to Ordering Information on front page.
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P6SMB11CAT3 Series
100
NONREPETITIVEPULSE WAVEFORMSHOWN IN FIGURE 210
tr≤ 10 ms100VALUE (%)PEAK VALUE − IPPIHALF VALUE −PP2PULSE WIDTH (tP) IS DEFINED ASTHAT POINT WHERE THE PEAKCURRENT DECAYS TO 50% OFIPP.PP , PEAK POWER (kW)1
50tP0.1
0.1 ms1 ms10 ms100 mstP, PULSE WIDTH1 ms10 ms0012t, TIME (ms)
345Figure 1. Pulse Rating CurveFigure 2. Pulse Waveform
160PEAK PULSE DERATING IN % OFPEAK POWER OR CURRENT @ TA= 25°C1401000P6SMB11CAT3GP6SMB18CAT3GC, CAPACITANCE (pF)1201008060402000255075100125150100P6SMB47CAT3GP6SMB91CAT3G10TJ = 25°Cf = 1 MHz11
10
BIAS VOLTAGE (VOLTS)
100
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
ZinVinLOADVLhttp://onsemi.com
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P6SMB11CAT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device isplaced in parallel with the equipment or component to beprotected. In this situation, there is a time delay associated withthe capacitance of the device and an overshoot conditionassociated with the inductance of the device and the inductanceof the connection method. The capacitive effect is of minorimportance in the parallel protection scheme because it onlyproduces a time delay in the transition from the operatingvoltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-ontime (time required for the device to go from zero current to fullcurrent) and lead inductance. This inductive effect produces anovershoot in the voltage across the equipment or componentbeing protected as shown in Figure 5. Minimizing thisovershoot is very important in the application, since the mainpurpose for adding a transient suppressor is to clamp voltagespikes. The SMB series have a very good response time,typically < 1 ns and negligible inductance. However, externalinductive effects could produce unacceptable overshoot.Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment orcomponents to be protected will minimize this overshoot.Some input impedance represented by Zin is essential toprevent overstress of the protection device. This impedanceshould be as high as possible, without restricting the circuitoperation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditionsand at a lead temperature of 25°C. If the duty cycle increases,the peak power must be reduced as indicated by the curves ofFigure 6. Average power must be derated as the lead or ambienttemperature rises above 25°C. The average power deratingcurve normally given on data sheets may be normalized andused for this purpose.
At first glance the derating curves of Figure 6 appear to bein error as the 10 ms pulse has a higher derating factor thanthe 10 ms pulse. However, when the derating factor for agiven pulse of Figure 6 is multiplied by the peak power valueof Figure 1 for the same pulse, the results follow theexpected trend.
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P6SMB11CAT3 Series
OVERSHOOT DUE TOINDUCTIVE EFFECTSVin (TRANSIENT)VLV
Vin (TRANSIENT)VLVVintdtD = TIME DELAY DUE TO CAPACITIVE EFFECTttFigure 5. Figure 6.
10.70.5DERATING FACTOR0.30.20.10.070.050.030.02
10 ms0.01
0.10.20.512510D, DUTY CYCLE (%)
2050100100 msPULSE WIDTH10 ms1 msFigure 7. Typical Derating Factor for Duty Cycle
UL RECOGNITION
The entire series has Underwriters LaboratoryRecognition for the classification of protectors (QVGV2)under the UL standard for safety 497B and File #116110.Many competitors only have one or two devices recognizedor have recognition in a non-protective category. Somecompetitors have no recognition at all. With the UL497Brecognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, EnduranceConditioning, Temperature test, DielectricVoltage-Withstand test, Discharge test and several more.Whereas, some competitors have only passed aflammability test for the package material, we have beenrecognized for much more to be included in their Protectorcategory.
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P6SMB11CAT3 Series
PACKAGE DIMENSIONS
SMBDO−214AACASE 403A−03
ISSUE F
HEENOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.DIMAA1bcDEHELL1MIN1.900.051.960.153.304.065.210.76MILLIMETERSNOMMAX2.132.450.100.202.032.200.230.313.563.954.324.605.445.601.021.600.51 REFMIN0.0750.0020.0770.0060.1300.1600.2050.030INCHESNOM0.0840.0040.0800.0090.1400.1700.2140.0400.020 REFMAX0.0960.0080.0870.0120.1560.1810.2200.063bDALL1cA1SOLDERING FOOTPRINT*2.2610.0892.7430.1082.1590.085SCALE 8:1mmǓǒinches*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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