BDY58资料

BDY57 – BDY58

NPN SILICON TRANSISTORS, DIFFUSED MESA

LF Large Signal Power Amplification

High Current Fast Switching

ABSOLUTE MAXIMUM RATINGSSymbol

VCEOVCBOVEBOICIBPTOTTJTS

Collector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageCollector CurrentBase CurrentPower DissipationJunction TemperatureStorage Temperature

@ TC = 25°

Ratings

BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58

Value

8012512016010

256

Unit

VVVAAWatts

175

-65 to +200°C

THERMAL CHARACTERISTICSSymbol

RthJ-C

Ratings

Thermal Resistance, Junction to Case

BDY57BDY58

Value

1

Unit

°C/W

COMSET SEMICONDUCTORS1/3

元器件交易网www.cecb2b.com

BDY57 – BDY58

ELECTRICAL CHARACTERISTICSTC=25°C unless otherwise noted

Symbol

VCEO(SUS)VCE(SAT)

Ratings

Collector-Emitter

Breakdown Voltage (*)Collector-Emitter saturationVoltage (*)

Test Condition(s)

IC=100 mA, IB=0

MinTypMxUnit

80125---0.5

--1.4

V

BDY57BDY58BDY57BDY58BDY57

IC=10 A, IB=1.0 AV

V(BR)CBO

Collector-Base BreakdownVoltage (*)

120160

--

-V

-

IC=5.0mA, IE=0

BDY58

V(BR)EBO

Emitter-Base BreakdownVoltage (*)

IE=5.0 A, IC=0

BDY57BDY58

-0.51.4V

ICBO

Collector-Base CutoffCurrent

Collector-Emitter CutoffCurrent

VCB=120 VIE=0 VVCE=80 VRBE=10 ΩTCASE=100°CV=10 V

BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58BDY57BDY58

1.0

-0.5

0.510

mA

ICER

--mA

IEBO

Emitter-Base Cutoff CurrentIEB

C=0 V

--20-1010

0.25-15-30

0.560---

mA

VCE=4 V, IC=10 A

h21E

Static Forward Currenttransfer ratio (*)

VCE=4 V, IC=20 AVCE=4 V, IC=10 A, TCASE=-30°C

V

fT

Transition Frequency

VCE=15 V, IC=1.0 A, f=10MHz

MHz

td + tr

Turn-on timeIC=15 A, IB=1.5 A-0.251µs

COMSET SEMICONDUCTORS2/3

元器件交易网www.cecb2b.com

BDY57 – BDY58

Symbol

Ratings

Test Condition(s)

MinTypMxUnit

tIC=15 A,s + tf

Turn-off time

IB1=1.5 A,BDY571

IB2=-1.5 A

BDY58

-(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

MECHANICAL DATA CASE TO-3DIMENSIONS

mminchesA25,451B38,81,52C30,091,184D17,110,67E9,780,38G11,090,43H8,330,32L1,620,06M19,430,76

N10,04P4,080,16

Pin 1 :Base

Pin 2 :CollectorCase :

Emitter

COMSET SEMICONDUCTORS2

µs

3/3